GE 760 - Page 378

16-
70
750/760 Feeder Management Relay GE Power Management
16.4 MODBUS MEMORY MAP 16 COMMUNICATIONS
16
7 Internal RS485
8 Internal Temperature
9Clock Not Set
10 Prototype Software
11 Not Calibrated
12 Force Relays
13 Force Analog Out
14 Simulation Mode
15 Pickup Test
16 Factory Service Mode
17 IRIG-B Failure
18
7
Not Used
19
7
Not Used
20
7
RTC Crystal
F25 2's COMPLEMENT SIGNED VALUE
To convert phase currents to Amps, multiply by ‘Phase CT Primary’ and divide by 1000.
To convert ground current to Amps, multiply by ‘Ground CT Primary’ and divide by 1000.
To convert sensitive ground current to Amps, multiply by ‘Sensitive Ground CT Primary’ and
divide by 10000.
To convert to voltages to Volts, multiply by ‘VT Ratio’, multiply by ‘VT Secondary Voltage’ and
divide by 1000.
F26 TRACE MEMORY CHANNEL SELECTOR
The contents of the Trace Memory Samples depends on the value contained in the Trace
Memory Channel Selector as follows:
DATA CHANNEL TYPE
0 Phase A Current F25
1 Phase B Current F25
2 Phase C Current F25
3 Ground Current F25
4 A-N (A-B) Voltage F25
5 B-N Voltage F25
6 C-N (C-B) Voltage F25
7 Line Voltage F25
8 Output Relay States F40
9 Logic Input States F46
10
3
Sensitive Ground Current F25
F27 COMMUNICATIONS PARITY
0 None
1Odd
Table 16–16: MODBUS MEMORY MAP DATA FORMATS (Sheet 11 of 24)
TYPE VALUE / BIT
MASK
DESCRIPTION
1 2 3 4 5 6 7 8 9
For explanation of Table footnotes, see page 16–83.