Marantz MM8003 - Page 46

64
Q215/Q315/Q415/Q515Q : 2SA1216 Y
∗hFE Rank O(30
to
60), Y(50
to
100), P(70
to
140), G(90
to
180)
13
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2922)
Application : Audio and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SA1216
–180
–180
–5
–17
–5
200(Tc=25°C)
150
–55
to
+150
Unit
V
V
V
A
A
W
°C
°C
■ Absolute maximum ratings
■ Electrical Characteristics
■Typical Switching Characteristics (Common Emitter)
SymboI
V
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SA1216
–100
max
–100max
–180min
30min∗
–2.0max
40typ
500typ
Unit
µ A
µ A
V
V
MHz
pF
Conditions
V
CB=–180V
V
EB=–5V
I
C=–25mA
V
CE=–4V, IC=–8A
I
C=–8A, IB=–0.8A
V
CE=–12V, IE=2A
V
CB=–10V, f=1MHz
V
CC
(V)
–40
R
L
(Ω)
4
I
C
(A)
–10
V
B2
(V)
5
IB2
(A)
1
ton
( µ s)
0.3typ
tstg
( µ s)
0.7typ
tf
( µ s)
0.2typ
IB1
(A)
–1
LAPT 2SA1216
(Ta=25°C)
(Ta=25°C)
IC
–
V
CE Characteristics (Typical)
hFE
–
I
C Characteristics (Typical) hFE
–
I
C Temperature Characteristics (Typical)
VCE(sat)
–
IB Characteristics (Typical)
Pc
–
Ta Derating
0
0
–5
–10
–15
–17
–1 –2 –3 –4
Collector-Emitter Voltage VCE(V)
Collector Current IC (A)
–1.5A
–50mA
–100mA
I
B
=–20mA
–700mA
–500mA
–1A
–400mA
–300mA
–200mA
–150mA
0
–3
–2
–1
0 –0.2 –0.4 –1.0–0.6 –0.8
Base Current I
B(A)
Collector-Emitter Saturation Voltage VCE(sat)(V)
IC=–10A
–5A
Safe Operating Area (Single Pulse)
–2 –10 –100 –300
–0.2
–1
–0.5
–10
–50
–5
Collector-Emitter Voltage V
CE(V)
Collector Current IC (A)
Without Heatsink
Natural Cooling
DC
10ms
0.02 0.1 1 10
0
20
40
60
Cut-off Frequency fT (MHZ)
(VCE=–12V)
Emitter Current I
E(A)
Typ
1 10 100 1000 2000
Time t(ms)
0.1
1
2
0.5
Transient Thermal Resistance θ j-a(˚C/W)
θj-a
–
t Characteristics
f
T
–
I
E Characteristics (Typical)
200
160
120
80
40
5
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
Collector Current I
C(A)
(V
CE=–4V)
–0.02 –0.1 –0.5 –1 –5 –10 –17
10
50
100
200
DC Current Gain hFE
125˚C
25˚C
–30˚C
–0.02 –0.1 –1 –10–0.5 –5 –17
10
50
100
300
Collector Current I
C(A)
DC Current Gain hFE
(VCE=–4V)
Typ
IC
–
V
BE Temperature Characteristics (Typical)
0
–17
–15
–10
–5
0 –2 –2.4–1
Base-Emittor Voltage V
BE(V)
Collector Current IC (A)
(VCE=–4V)
125˚C(Case Temp)
25˚C(Case Temp)
–30˚C(Case Temp)
External Dimensions MT-200
2
3
1.05
+0.2
-0.1
BE
5.45
±0.1
5.45
±0.1
2-ø3.2
±0.1
36.4
±0.3
9
24.4
±0.2
7
21.4
±0.3
20.0min
4.0max
0.65
+0.2
-0.1
3.0
+0.3
-0.1
6.0
±0.2
2.1
a
b
C
Weight : Approx 18.4g
a. Type No.
b. Lot No.