Marantz MM8003 - Page 45

63
Q214/Q314/Q414/Q514 : 2SC2922 Y
61
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1216)
Application : Audio and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SC2922
180
180
5
17
5
200(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■ Absolute maximum ratings ■ Electrical Characteristics
■Typical Switching Characteristics (Common Emitter)
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SC2922
100
max
100max
180min
30min∗
2.0
max
50typ
250typ
Unit
µ A
µ A
V
V
MHz
pF
Conditions
V
CB=180V
V
EB=5V
I
C=25mA
V
CE=4V, IC=8V
I
C=8A, IB=0.8A
V
CE=12V, IE=–2A
V
CB=10V, f=1MHz
VCC
(V)
40
R
L
(Ω)
4
I
C
(A)
10
V
B2
(V)
–5
IB2
(A)
–1
ton
( µ s)
0.2typ
t
stg
( µ s)
1.3typ
t
f
( µ s)
0.45typ
IB1
(A)
1
LAPT 2SC2922
(Ta=25°C) (Ta=25°C)
IC
–
V
CE Characteristics (Typical)
hFE
–
I
C Characteristics (Typical) hFE
–
I
C Temperature Characteristics (Typical) θj-a
–
t Characteristics
I
C
–
V
BE Temperature Characteristics (Typical) VCE(sat)
–
IB Characteristics (Typical)
Pc
–
Ta Derating
Safe Operating Area (Single Pulse)
fT
–
I
E Characteristics (Typical)
0
3
2
1
0 0.2 0.4 0.6 1.00.8
Base Current I
B(A)
Collector-Emitter Saturation Voltage VCE(sat)(V)
IC=10A
5A
0
17
15
10
5
0 2 2.41
Base-Emittor Voltage V
BE(V)
Collector Current IC (A)
(VCE=4V)
125˚C (Case Temp)
25˚C
–30˚C (Case Temp)
200
160
120
80
40
5
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
2 10 100 300
0.2
1
0.5
10
50
5
Collector-Emitter Voltage V
CE(V)
Collector Current IC (A)
Without Heatsink
Natural Cooling
DC
10ms
0.02 0.1 1 1050.5 17
10
50
100
200
Collector Current I
C(A)
DC Current Gain hFE
(VCE=4V)
Typ
0
0
5
17
15
10
21 34
Collector-Emitter Voltage V
CE(V)
Collector Current IC (A)
600mA
700mA
1A
500mA
400mA
300mA
200mA
100mA
50mA
I
B
=20mA
1.5A
(VCE=4V)
0.02 0.5 1 5 100.1 17
Collector Current I
C(A)
DC Current Gain hFE
125˚C
25˚C
–30˚C
10
50
100
200
–0.02 –0.1 –1 –5 –10
0
40
60
20
80
Cut-off Frequency fT (MHZ)
(VCE=12V)
Emitter Current I
E(A)
Typ
1 10 100 1000 2000
Time t(ms)
0.1
1
2
0.5
Transient Thermal Resistance θ j-a(˚C/W)
2
3
1.05
+0.2
-0.1
BE
5.45
±0.1
5.45
±0.1
2-ø3.2
±0.1
36.4
±0.3
9
24.4
±0.2
7
21.4
±0.3
20.0min
4.0max
0.65
+0.2
-0.1
3.0
+0.3
-0.1
6.0
±0.2
2.1
a
b
C
External Dimensions MT-200
Weight : Approx 18.4g
a. Type No.
b. Lot No.
∗hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180)