Yaesu FT-101EE - Page 34

1 XF-32A SSB R RESISTOR
2 XF-30C CW(OPTION) 18 CARBON FILM 4W 1002
1,3 lw 150Q
AF UNIT 19 ; “4 W 180 Q
PRINTED CIRCUIT BOARD PB1315(A~Z) 2, 21, 30 Yew ~ 4702
Q FET, IC & TRANSISTOR - 9~11, 14, 24, 28 14 W 1KQ
2,3 TR. 2SC372Y 20 “yw 1.5KQ
6,7 TR. 2SC373 6,8 “uw _ 2.2KQ
9 TR. 2SC1000GR 12, 15, 16, 22, 25, 26,29. 14W 4.7KQ
1 FET. 2SK19GR 32 “yw 10KQ
5 FET. 2SK19Y 33 lew 15KQ
8 Ic AN214 13, 17, 23, 27 “ow 22KQ
4 Ic TA-7042M 7 lew 33KQ
4 Yew 100KQ
D DIODE :
1, 2, 3,4 1S1555 VR VARIABLE RESISTOR
5 W Z-090 1 TRIIR 500 2B
2 TRI1IR 5KQB
R RESISTOR or CAPACITOR 2
13,14CARBON FILM “uw 100Q 20, 28,30 DIPPED MICA 50WV_ 30PF
53 lew 120Q 19, 27, 32 50WV 40PF
41 Yew 220Q 38 _ 50WV 50PF
12 Yow 3300 37 50WV __ 82PF
16, 17, 33 lew 470Q 5, 10, 50WV 100PF
45 yw 560Q 4 50WV 150PF
27 yw 680 Q 21 50WV 300PF
5, 8, 15, 45, 49 Yew 1KQ 23 50WV 820PF
21 lew 1.5KQ 36 50WV 1000PF
20, 28, 34 Yew 2.2KQ 31 CERAMIC DISC 50WV 0.001uF
6 low 3.3KQ 2, 8, 9, 13, 17, 18, 24, 50WV 0.01uF_
1, 3, 14, 29~ 31, 38, 39, 40 Yow 4.7KQ 26, 29, 33
4, 48 Yew 5.6KQ 6, 11, 22, 25, 34 50WV 0.047uF
9, 10, 35 Yew 10KQ 12 PLASTIC FILM 50WV 0.22uF
51, Yew 12KQ 15 ELECTROLYTIC 16WV 100uF
11,18 lew 15KQ Tc TRIMMER CAPACITOR
7, 52 Yow 22KQ 2~4 CERAMIC ECV1ZW20P40 20PF
43, 47 “ew 27KQ 1, 5,6 ECV1IZW50P40 50PF
32, 42 “yw 33KQ
50 ww 39KQ L INDUCTOR
2, 36, 37, 46 Yww 47KQ 5 RF CHOKE 10uH
22 Yow 470KQ 2~4,6,7 RF CHOKE 22uH
23, 24 Lew 3.3MQ 8,9 RF CHOKE 250uH
25, Yew 5.6MQ
26 THERMISTOR SDT250 T TRANFORMER
110 IF TRANSFORMER
VR VARIABLE RESISTOR
3,4 TR-11R 10KQ2B x CRYSTAL
1,5 V160KRZ-1 10KQB 1 HC-6/U 3178.5kHz(USB)
2 V160KRZ-1 2MQB 2 HC-6/U 3181.5kHz(LSB)
[ 3 HC-6/U 3179.3 kHz(CW/AM)
Cc CAPACITOR
46 DIPPED MICA 50WV 100PF REG & CALIB UNIT
15, 27,51,52 MYLAR 50WV 0.001uF PRINTED CIRCUIT BOARD PB-1314(A~Z)
47 50WV 0.0047nF Q TRANSISTOR & IC
1,9, 12,17, 22, 33, 34 50WV 0.01uF 1,3 TR. 2SC735Y
24, 28, 29, 30, 50WV 0.0224F 2 IC MFC-6020
3, 25, 26, 39,48, 50 50WV 0.047 uF 4 Ic MFC-6030A~4A
23, 32, 37, 43, 45 50WV 0.1uF
5, 6,7, 10, 14, 2IELECTROLYTIC 16WV luF D DIODE
11 16WV 2.2uF 1, 2,3 Si 1S1555
2, 16, 19, 20, 31, 36 16WV 10uF
8, 35 16WV 9 _-22uF R RESISTOR
40 16WV 9 _- 33uF 3,6 CARBON FILM 4W 100 Q
4, 18, 38, 42, 49 16WV_ 100uF 10, 19, 20 lew 470Q
13, 41, 44 16WV 220uF 8 Yew 560 Q
7,21 Yow 680 2
MOD & OSC UNIT 16 lew 1.5KQ
PRINTED CIRCUIT BOARD PB-1184(A~Z) 17 “uw 4.7KQ
Q FET & TRANSISTOR : 1, 4, 13, 15, 18 yw 10KQ
2, 3,5,6 TR. 2SC372Y 2 Zw 15KQ
4 TR. 2SC828P 14 lew 47KQ
1 FET. 2SKI19Y 2,5 lew 100KQ
9 CARBON COMPOSITION 144W 4.72
D DIODE 11 2W 6.8KQ
1~4 Ge. 1S1007
—— 33 ——