Shelf configuration
Program #9 is set for chamber cleaning. User can modify the other
programs (#1-#8)
For RIE plasma(Directional):
Ground shelf upper then power shelf bottom with samples on the
power shelf. Floating not used. Pressure should be in the 0.1 - 0.5T
range. RIE is a very aggressive etch with heavy ionic bombardment.
The etch is directional and isotropic, mainly used for Oxygen plasma
cleaning and Argon plasma physical etching.
4
3
1
2
RIE PLASMA 1
DIRECT PLASMA
RIE PLASMA 2
DOWNSTREAM
GROUND
POWER
GROUND
POWER
FLOAT
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