For Direct plasma:
Power shelf upper then ground shelf bottom with samples on
the ground shelf. Floating not used. Pressure should be in the 0.5 -
1T range. This is a less aggressive etch but does include ions
but ions are not necessarily directed towards the samples. The
plasma is anisotropic.
For downstream plasma:
Ground shelf upper then power shelf in middle then floating shelf
bottom with samples on the floating shelf. Pressure should be in the
0.5 - 1 T range. In this configuration, all of the ionic activity is
contained between the powered and ground shelves and only non-
charged particles (free radicals) are able to pass through the power
shelf to the area below it. This is the least aggressive type of etch
and is typically used when samples are sensitive to ion damage.
Shelves
To Next Page
Loading...