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Quectel EG915U-EU
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LTE Standard Module Series
EG915U-EU_Hardware_Design 32 / 81
voltage source and can be expanded to two sub paths with the star structure. The width of VBAT_BB
trace should be no less than 2.0 mm. The width of VBAT_RF trace should be no less than 2.5 mm. In
principle, the longer the VBAT trace is, the wider it will be.
In addition, in order to ensure the stability of power source, it is suggested that a TVS diode of which
reverse stand-off voltage is 4.7 V and peak pulse power is up to 2550 W should be used. The following
figure shows the reference circuit with and without charging function.
Module
VBAT_RF
VBAT_BB
VBAT
C1
100 µF
C6
100 nF
C7
33 pF
C8
10 pF
+
+
C2
100 nF
C5
100µF
C3
33pF
C4
10 pF
D1
WS4.5D3HV
Figure 8: Star Structure of the Power Supply

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