High performance trench technology for extremely low rDS(on)
SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8);
low profile (1 mm thick)
Termination is Lead-free and RoHS Compliant
16.3. Pinning
17. FDC604P
17.1. General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench
process. It has been optimized for battery power management applications.
17.2. Features
–5.5 A, –20 V. RDS(ON) = 33 mΩ @ VGS = –4.5 V
RDS(ON) = 43 mΩ @ VGS = –2.5 V
RDS(ON) = 60 mΩ @ VGS = –1.8 V
Fast switching speed.
High performance trench technology for extremely low RDS(ON)(S)
17.3. Pinning
18. CONNECTORS
18.1. SCART (SC1)
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