Siemens SITRANS P DS III - Page 47

SITRANS P DS III (7MF4.33.. 7MF4.34.. 7MF4.35..)
A5E03434626-03, 06/2013
47
Certificates and approvals
HART
PROFIBUS PA and FOUNDATION
Fieldbus
Designation
II 2/3 G Ex nA II T4/T5/T6 Gc
II 2/3 G Ex ic IIC T4/T5/T6 Gc
Connection "nA" U
n
= 45 V U
m
= 32 V
Connection "ic" To a circuit with the operating values:
U
i
= 45 V
FISCO supply unit
U
O
=17.5 V, I
O
= 570 mA
Linear barrier
U
0
= 32 V, I
0
= 132 mA, P
0
= 1 W
Effective inner capacitance
C
i
= 6 nF
C
i
= 1.1 nF
Effective inner inductance
L
i
= 0.4 mH
L
i
= 7 µH
● Explosion protection in accordance
with FM
Certificate of Compliance 3008490
Designation (XP/DIP) or IS; NI; S CL I, DIV 1, GP ABCD T4 ... T6; CL II, DIV 1, GP EFG; CL III; CL I, ZN 0/1 AEx ia
IIC T4 ... T6; CL I, DIV 2, GP ABCD T4 ... T6; CL II, DIV 2, GP FG; CL III
Permissible ambient temperature T
a
= T4: -40 ... +85 °C (-40 ... +185 °F)
T
a
= T5: -40 ... +70 °C (-40 ... +158 °F)
T
a
= T6: -40 ... +60 °C (-40 ... +140 °F)
Entity parameters As per "control drawing"
A5E00072770A:
U
i
= 30 V, I
i
= 100 mA,
P
i
= 750 mW, R
i
= 300 Ω,
C
i
= 6 nF, L
i
= 0.4 mH
As per "control drawing"
A5E00072770A:
U
max
= 17.5 V, I
max
= 380 mA,
P
max
= 5.32 W,
C
max
= 6 nF, L
max
= 0.4 mH
●
Explosion protection as per CSA
Certificate of Compliance 1153651
Designation (XP/DIP) or (IS) CL I, DIV 1, GP ABCD T4 ... T6; CL II, DIV 1, GP EFG; CL III; Ex ia IIC T4 ... T6:
CL I, DIV 2, GP ABCD T4 ... T6; CL II, DIV 2, GP FG; CL III
Permissible ambient temperature T
a
= T4: -40 ... +85 °C (-40 ... +185 °F)
T
a
= T5: -40 ... +70 °C (-40 ... +158 °F)
T
a
= T6: -40 ... +60 °C (-40 ... +140 °F)
Entity parameters As per "control drawing" A5E00072770A:
U
i
= 30 V, I
i
= 100 mA, P
i
= 750 mW, R
i
= 300 Ω, L
i
= 0.4 mH, C
i
= 6 nF
A
Appendix A
A.1
Certificate
The certificates can be found on the enclosed CD and on the Internet under:
Certificates (http://www.siemens.com/processinstrumentation/certificates)