Standard C828M - Page 4

signed with Professional minded techniques and latest technicl knowhow.
(a) Receiver
(1) High Sensitivity
High sensitivity design as represented by the ~3dB QS 20dB and the over
23dB S/N at OdB input.
(2) Excellent Cross-Modulation Characteristics
The e3 cellent cross-modulation characteristics are due to the use of FET's
for the radio frequency ampliher and the fi rst and second mixers, also due
to the removal of the fi rst intermediate frequency (IF) amplifier and the gains
distribution made with our new technical approach.
(3) Ceramic Filter
The two ceramic fi lters in the second IF amplifying stage play a role for
the alleviation of ripples within pass band for better selectivity characteri
stics.
_ (4) Integrated Circuits
The second IF amplifying stage consists of 3-stage amplifying unit plus
the integrated circuitry, thus showing very good limiter effect.
(5) Squelch Circuit
The squelch circuit is a noise rectifier type enjoying an established reputa-
tion for mobile Station use, and the circuit operates securely, thanks to the
high gains resulting from the 2-stage noise amplification.
(6) Squelch Time Constant
With the squelch unit (accessory) connected to the accessory terminal on
the rear panel, the squelch time constant can be changed to the best suitable
value for respective uses as mobile and fi xed stations.
(7) 3W of Audio Output
The maximum audio Output is as high as 3W, permitting the Operation of
your transceiver at Optimum sound level even in a noisy expressway.
(8) "Busy" Indicator Lamp
The green lamp turns off and on in association with the squelch circuit,
regardless of the Position of the volume control knob, to clearly indicate
which rig is receiving the signal. This lamp is convenient in a parallel Oper
ation at 50MHz, 430MHz and other bands.
(9) Highly Sensitive Incoming Signal Meter
This incoming signal meter, containing a meter amplifier designed to swing
the pointer in response even to weak incoming signal, can show the exact
change in the input voltage of the antenna.
(b) Transmitter
(1) High-gain, High-efficiency Transistors
Newly developed high-gain, high-efficiency transistors are used. The fi nal
stage is equipped with 2N6082 providing sufficient margin to the Operation.
(2) Offset Mixer Provided with FET
The MOS FET incorporated in the offset mixer of the signal transmitting
section reduces the occurrence of spurious radiation.
(3) Direct FM Modulation System
The 22. OMHz frequency from the offset oscillator undergoes direct FM
modulation. This eliminates the difference of modulation degree between
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