Cypress MB95710M Series - Flash Memory Program;Erase Characteristics

MB95710M Series
MB95770M Series
Document Number: 002-09307 Rev. *D Page 159 of 172
22.6 Flash Memory Program/Erase Characteristics
*1: V
CC = 5.5 V, TA = +25 °C, 0 cycle
*2: V
CC = 1.8 V, TA = +85 °C, 100000 cycles
*3: These values were converted from the result of a technology reliability assessment. (These values were converted
from the result of a high temperature accelerated test using the Arrhenius equation with the average temperature
being +85 °C.)
Parameter
Value
Unit Remarks
Min Typ Max
Sector erase time
(2 Kbyte sector)
—0.3*
1
1.6*
2
s The time of writing “0x00” prior to erasure is excluded.
Sector erase time
(24 Kbyte sector and
32 Kbyte sector)
—0.6*
1
3.1*
2
s The time of writing “0x00” prior to erasure is excluded.
Byte writing time — 17 272 µs System-level overhead is excluded.
Program/erase cycle 100000 — — cycle
Power supply voltage
at program/erase
1.8 — 5.5 V
Flash memory data
retention time
20*
3
——
year
Average T
A = +85 °C
Number of program/erase cycles: 1000 or below
10*
3
——
Average T
A = +85 °C
Number of program/erase cycles: 1001 to 10000
inclusive
5*
3
——
Average T
A = +85 °C
Number of program/erase cycles: 10001 or above