Edwards iXM200

Process gas
Chemical
name
Maximum
process
g
as ow
(slm)
TLV/LEL
(ppm)*
25%
TLV/LEL
(ppm)
N
2
O re-
lease
r
ate
(slm)
Maximum
N
2
O de-
tected
outside
enclosure
(ppm)
ERC
(ppm)
Pass/Fail†
Ammonia NH
3
10 25 6.25 5 3 6.00 Pass
Sulphur Hexa-
uoride
SF
6
0.2 1000 250 5 3 0.12 Pass
Silicon Tetra-
chloride
SiCI
4
0.1 1 0.25 5 3 0.06 Pass
Fluorine F
2
0.3 1 0.25 5 3 0.18 Pass
Hydrogen Fluo-
ride
HF 0.3 3 0.75 5 3 0.18 Pass
Hydrogen Chlor-
ide
HCI 0.4 5 1.25 5 3 0.24 Pass
Chlorine Cl
2
0.2 0.5 0.125 5 3 0.12 Pass
Ammonia NH
3
10 25 6.25 5 3 6.00 Pass
Arsine AsH
3
0.02 0.05 0.0125 5 3 0.01 Pass
Boron Trichloride BCl
3
1 5 1.25 5 3 0.60 Pass
Chloride T
riuor-
ide
ClF
3
0.04 0.1 0.025 5 3 0.02 P
ass
DCS SiCl
2
H
2
1 5 1.125 5 3 0.60 Pass
Diborane B
2
H
6
0.02 0.1 0.025 5 3 0.01 Pass
Nitrogen Triuor-
ide
NF
3
4 10 2.5 5 3 2.40 P
ass
Phosphine PH
3
0.02 0.3 0.075 5 3 0.01 Pass
Silane SiH
4
2 5 1.25 5 3 1.20 Pass
TEOS SiC
8
H
20
O
4
2 10 2.5 5 3 1.20 Pass
Tungsten Hexa-
uoride
WF
6
1 3 0.75 5 3 0.60 Pass
* Threshold Limit Value (TLV)/Lower Explosive Limit (LEL) in Parts Per Million (PPM) 25% TLV/LEL
(ppm)
† Where P
ass indic
ates permied enclosure (sases SEMI S2 criteria of less than 25% of the TLV)
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M56635880_D - Technical data