Harman Kardon AVR 1600

2002. 12. 5 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC812T
Revision No : 1
FOR MUTING AND SWITCHING APPLICATION.
FEATURES
High Emitter-Base Voltage : V
EBO
=25V(Min.)
High Reverse h
FE
: Reverse h
FE
=150(Typ.) (V
CE
=-2V, I
C
=-4mA)
Low on Resistance : R
ON
=1 (Typ.), (I
B
=5mA)
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
A
B
D
E
TS6
2.9 0.2
1.6+0.2/-0.1
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
1.9 0.2
0.95
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
C
F
G
H
I
J
K 0.60
L 0.55
A
F
GG
D
K
K
B
E
C
L
H
J
J
I
2
3
5
16
4
+
_
+
_
+
_
+
_
+
_
1. Q EMITTER
2. Q BASE
3. Q COLLECTOR
4. Q EMITTER
5. Q BASE
6. Q COLLECTOR
1
1
2
2
2
1
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification B: 350 1200
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
20 V
Emitter-Base Voltage
V
EBO
25 V
Collector Current
I
C
300 mA
Base Current
I
B
60 mA
Collector Power Dissipation
P
C
*
0.9 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
V
CB
=50V, I
E
=0
- - 0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=25V, I
C
=0
- - 0.1
A
DC Current Gain
h
FE
V
CE
=2V, I
C
=4mA
350 - 1200
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=30mA, I
B
=3mA
- 0.042 0.3 V
Base-Emitter Voltage
V
BE
V
CE
=2V, I
C
=4mA
- 0.61 - V
Transition Frequency
f
T
V
CE
=6V, I
C
=4mA
- 30 - MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
- 4.8 7 pF
Switching
Time
Turn-on Time
t
on
1kΩ
3kΩ
4kΩ
50Ω
10V
CC
V =12V
BB
V =-3V
1µs
2%
OUTPUT
DUTY CYCLE
INPUT
<
=
- 160 -
nS
Storage Time
t
stg
- 500 -
Fall Time
t
f
- 130 -
h Rank
FE
Type Name
Marking
Lot No.
M
123
654
* Package mounted on a ceramic board (600 0.8 )
1
Q1 Q2
23
654
EQUIVALENT CIRCUIT (TOP VIEW)
EPITAXIAL PLANAR NPN TRANSISTOR
AVR1600 harman/kardon
148