Kirisun DM588 - Page 66

DM588 Service Manual
SN
Material NO
Material Name
Specifications
QTY
Component NO
61
2CC1-10-C0G500-6
R0C
R multi-layer chip
capacitor
1005, 6P±0.25P, 50V, C0G 7 C146,C147,C179,C185,C186,C211,C228
62
2CC1-10-C0G500-3
R0C
R multi-layer chip
capacitor
1005, 3P±0.25P, 50V, C0G 5 C148,C383,C187,C203,C216
63
2CC1-10-X7R500-4
71K
R multi-layer chip
capacitor
1005, 470P±10%, 50V, X7R 6 C150,C151,C385,C57,C58,C68
64
2CC1-10-X5R100-4
74K
R multi-layer chip
capacitor
1005, 470nF±10%, 10V, X5R 1 C162
65
2CC1-10-C0G500-4
70J
R multi-layer chip
capacitor
1005, 47P±5%, 50V, C0G 1 C163
66
2CC1-10-C0G500-1
80J
R multi-layer chip
capacitor
1005, 18P±5%, 50V, C0G 2 C164,C169
67
2CC1-10-C0G500-2
71J
Multi-layer chip
capacitor
1005, 270P±5%, 50V, C0G 4 C165,C166,C227,C222
68
2CC1-10-C0G500-3
00J
Multi-layer chip
capacitor
1005, 30P±5%, 50V, C0G 5 C168,C170,C265,C266,C289
69
2CT1-TP20-100-2R
2M
R SMD Tantalum
capacitor
2012, 2.2μF±20%, 10V, TP series
(Encapsulation P)
1 C402
70 1DV1-1SV305 R SMD varactor 1SV305 14
D4,D5,D6,D7,D8,D9,D10,D11,D13,D18,D19,D21,
D22,D29
71
2CC1-28-C0G1000-
300D
High-Q capacitor,
high-voltage
1111 encapsulation, 30pF 2 C573,C576
72
2CC1-28-C0G1000-
200D
High-Q capacitor,
high-voltage
1111 encapsulation, 20pF 1 C575
73
2CC1-28-C0G1000-
120D
High-Q capacitor,
high-voltage
1111 encapsulation, 12pF 1 C578
74
2CC1-28-C0G1000-
100D
High-Q capacitor,
high-voltage
1111 encapsulation, 10pF 1 C603
75 1TF1-TS5A3167DC Analogue electronic TS5A3167DCKR, TI, SC70 2 IC6,IC22
63