ADSP21487KSWZ-2B (DIGITAL : U1021)
TOP VIEW
(PINS DOWN)
1
44
45
89
88
132
176
133
PIN 1
GND PAD
(PIN 177)
at BOTTOM
Pin Name Pin No. Pin Name Pin No. Pin Name Pin No. Pin Name Pin No.
SDDQM 1 V
DD
_
EXT
45 DAI_P10 89 V
DD
_
INT
133
MS0
2 DPI_P08 46 V
DD
_
INT
90 FLAG0 134
SDCKE 3 DPI_P07 47 V
DD
_
EXT
91 FLAG1 135
V
DD
_
INT
4 V
DD
_
INT
48 DAI_P20 92 FLAG2 136
CLK_CFG1 5 DPI_P09 49 V
DD
_
INT
93 NC 137
ADDR0 6 DPI_P10 50 DAI_P08 94 FLAG3 138
BOOT_CFG0 7 DPI_P11 51 DAI_P14 95 NC 139
V
DD
_
EXT
8 DPI_P12 52 DAI_P04 96 NC 140
ADDR1 9 DPI_P13 53 DAI_P18 97 V
DD
_
EXT
141
ADDR2 10 DPI_P14 54 DAI_P17 98 NC 142
ADDR3 11 DAI_P03 55 DAI_P16 99 V
DD
_
INT
143
ADDR4 12 NC 56 DAI_P12 100 TRST
144
ADDR5 13 V
DD
_
EXT
57 DAI_P15 101 NC 145
BOOT_CFG1 14 NC 58 V
DD
_
INT
102 EMU 146
GND 15 NC 59 DAI_P11 103 DATA0 147
ADDR6 16 NC 60 V
DD
_
EXT
104 DATA1 148
ADDR7 17 NC 61 V
DD
_
INT
105 DATA2 149
NC 18 V
DD
_
INT
62 BOOT_CFG2 106 DATA3 150
NC 19 NC 63 V
DD
_
INT
107 TDO 151
ADDR8 20 NC 64 AMI_ACK 108 DATA4 152
ADDR9 21 V
DD
_
INT
65 GND 109 V
DD
_
EXT
153
CLK_CFG0 22 NC 66 THD_M 110 DATA5 154
V
DD
_
INT
23 NC 67 THD_P 111 DATA6 155
CLKIN 24 V
DD
_
INT
68 V
DD
_
THD
112 V
DD
_
INT
156
XTAL 25 NC 69 V
DD
_
INT
113 DATA7 157
ADDR10 26 WDTRSTO
70 V
DD
_
INT
114 TDI 158
SDA10 27 NC 71 MS1
115 SDCLK 159
V
DD
_
EXT
28 V
DD
_
EXT
72 V
DD
_
INT
116 V
DD
_
EXT
160
V
DD
_
INT
29 DAI_P07 73 WDT_CLKO 117 DATA8 161
ADDR11 30 DAI_P13 74 WDT_CLKIN 118 DATA9 162
ADDR12 31 DAI_P19 75 V
DD
_
EXT
119 DATA10 163
ADDR17 32 DAI_P01 76 ADDR23 120 TCK 164
ADDR13 33 DAI_P02 77 ADDR22 121 DATA11 165
V
DD
_
INT
34 V
DD
_
INT
78 ADDR21 122 DATA12 166
ADDR18 35 NC 79 V
DD
_
INT
123 DATA14 167
RESETOUT
/RUNRSTIN 36 NC 80 ADDR20 124 DATA13 168
V
DD
_
INT
37 NC 81 ADDR19 125 V
DD
_
INT
169
DPI_P01 38 NC 82 V
DD
_
EXT
126 DATA15 170
DPI_P02 39 NC 83 ADDR16 127 SDWE
171
DPI_P03 40 V
DD
_
EXT
84 ADDR15 128 SDRAS 172
V
DD
_
INT
41 V
DD
_
INT
85 V
DD
_
INT
129 RESET 173
DPI_P05 42 DAI_P06 86 ADDR14 130 TMS 174
DPI_P04 43 DAI_P05 87 AMI_WR
131 SDCAS 175
DPI_P06 44 DAI_P09 88 AMI_RD
132 V
DD
_
INT
176
GND 177*
* at BOTTOM
W9864G6KH-6(DIGITAL : U1020)
Pin description
W9864G6KH
Publication Release Date: Nov. 12, 2013
- 4 - Revision A02
4. PIN CONFIGURATION
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
DQ 0
DQ 1
DQ 2
DQ 3
DQ 4
DQ 5
DQ 6
DQ 7
LDQM
CAS
RAS
CS
BS 0
BS 1
A10/ AP
A0
A1
A2
A3
DQ 15
DQ 14
DQ 13
DQ 12
DQ 11
DQ 10
DQ 9
DQ 8
NC
UDQ M
CL K
CKE
NC
A11
A9
A8
A7
A6
A5
A4
VDDQ
VDDQ
VS SQ
VS SQ
VDD
VDD
VSS
VS SQ
VSSQ
VDDQ
VSS
VSS
WE
VDD
VDDQ
W9864G6KH
Publication Release Date: Nov. 12, 2013
- 5 - Revision A02
5. PIN DESCRIPTION
PIN NUMBER PIN NAME FUNCTION DESCRIPTION
23 ~ 26, 22,
29 ~35
A0 A11
Address
Multiplexed pins for row and column address.
Row address: A0
A11. Column address: A0 A7.
A10 is sampled during a precharge command to
determine if all banks are to be precharged or bank
selected by BS0, BS1.
20, 21
BS0, BS1 Bank Select
Select bank to activate during row address latch time,
or bank to read/write during address latch time.
2, 4, 5, 7, 8, 10,
11, 13, 42, 44,
45, 47, 48, 50,
51, 53
DQ0 DQ15
Data
Input/ Output
Multiplexed pins for data output and input.
19
CS
Chip Select
Disable or enable the command decoder. When
command decoder is disabled, new command is
ignored and previous operation continues.
18
Row Address
Strobe
Command input. When sampled at the rising edge of
the clock
,
CA
and
WE
define the
operation to be executed.
17
CAS
Column
Address Strobe
Referred to
16
WE
Write Enable
Referred to
39, 15
UDQM
LDQM
Input/output
mask
The output buffer is placed at Hi-Z (with latency of 2)
when DQM is sampled high in read cycle. In write
cycle, sampling DQM high will block the write
operation with zero latency.
38 CLK Clock Inputs
System clock used to sample inputs on the rising
edge of clock.
37 CKE Clock Enable
CKE controls the clock activation and deactivation.
When CKE is low, Power Down mode, Suspend
mode, or Self Refresh mode is entered.
1, 14, 27 VDD Power Power for input buffers and logic circuit inside DRAM.
28, 41, 54 VSS Ground
Ground for input buffers and logic circuit inside
DRAM.
3, 9, 43, 49 VDDQ
Power for I/O
buffer
Separated power from VDD, to improve DQ noise
immunity.
6, 12, 46, 52 VSSQ
Ground for I/O
buffer
Separated ground from VSS, to improve DQ noise
immunity.
36, 40 NC No Connection No connection.
52
Caution in
servicing
Electrical Mechanical Repair Information Updating