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MS-7520 Mainboard
Advance DRAM Configuration
Press <Enter> to enter the sub-menu and the following screen appears.
1N/2N Memory Timing
This item controls the SDRAM command rate. Select [1N] makes SDRAM signal
controller to run at 1N (N=clock cycles) rate. Selecting [2N] makes SDRAM signal
controller run at 2N rate.
CAS# Latency (CL)
This controls the CAS latency, which determines the timing delay (in clock cycles)
before SDRAM starts a read command after receiving it.
tRCD
When DRAM is refreshed, both rows and columns are addressed separately.
This setup item allows you to determine the timing of the transition from RAS
(row address strobe) to CAS (column address strobe). The less the clock
cycles, the faster the DRAM performance.
tRP
This setting controls the number of cycles for Row Address Strobe (RAS) to be
allowed to precharge. If insufficient time is allowed for the RAS to accumulate its
charge before DRAM refresh, refresh may be incomplete and DRAM may fail to
retain data. This item applies only when synchronous DRAM is installed in the
system.
tRAS
This setting determines the time RAS takes to read from and write to memory
cell.
Advance Memory Setting
Setting to [Auto] enables the advance memory timing automatically to be determined
by BIOS. Setting to [Manual] allows you to set advanced memory timings.
Extreme Memory Profile
This item is used to enable/disable the Intel Extreme Memory Profile (XMP). For further
information please refer to Intel's official website.
Memory Ratio
This item allows you to set the memory multiplier.
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