SIM Tech SIMCom SIM800C - SIM800 C ESD Characteristics

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SIM800C_Hardware_Design_V1.00 45 2014-10-30
@ f>200kHz
2.0
mV
I
VBAT
Average currnet
Power down mode
130
150
uA
Sleep mode (AT+CFUN=1)：
( BS-PA-MFRMS=9 )
( BS-PA-MFRMS=5)
( BS-PA-MFRMS=2)
0.98
1.12
1.25
mA
mA
mA
Idle mode (AT+CFUN=1)：
GSM850
EGSM900
DCS1800
PCS1900
13.8
13.8
13.8
13.8
mA
mA
mA
mA
Voice call (PCL=5)：
GSM850
EGSM900
Voice call (PCL=0)：
DCS1800
PCS1900
197
207
130
140
mA
mA
mA
mA
Data mode GPRS (1Rx,4Tx)：
GSM850
EGSM900
DCS1800
PCS1900
394
416
271
285
mA
mA
mA
mA
Data mode GPRS (3Rx,2Tx)：
GSM850
EGSM900
DCS1800
PCS1900
323
330
212
227
mA
mA
mA
mA
Data mode GPRS (4Rx,1Tx)：
GSM850
EGSM900
DCS1800
PCS1900
213
210
150
162
mA
mA
mA
mA
I
MAX
Peak current
During Tx burst
2.0
A
Note: In above table the current consumption value is the typical one of the module tested in laboratory. In
the mass production stage, there may be differences among each individual.
6.9 Electro-Static Discharge
SIM800C is an ESD sensitive component, so attention should be paid to the procedure of handling and
packaging. The ESD test results are shown in the following table.
Table 36: The ESD characteristics (Temperature: 25℃, Humidity: 45 %)
Pin name
Contact discharge
Air discharge
VBAT
±6KV
±12KV