Infineon XENSIV TLI4971 - Write and programming sequence; Temporary register

Application Note 12 of 31 Rev. 1.30
2022-03-01
Current Sensor TLI4971
Programming Guide and User Manual
3.4 Write and programming sequence
AOUT
640 µs
OCD2
Write command
set data
EEP command
prog. ones
apply V
PROG
Write command
set data
EEP command
prog. zeroesEEP command
refresh apply V
PROG
EEP command
refresh
GND
3V3
20V6
30 ms 100 µs
20.6V
high z
16bit
com + address
16bit
com + address
16bit
com + address
16bit data
16bit com
16bit com
wait
16bit
com + address
16bit data
16bit
com + address
high z
16bit
com + address
16bit com
20.6V
V
Sens
Figure 12 Programming Sequence
Figure 12 shows the command sequence for a write command and describes the sequence to program the
EEPROM. After writing the values into the EEPROM, the programming voltage has to be applied for 30ms followed
by a refresh command as shown.
3.5 Temporary register
For test purpose, it is possible to change the sensor settings in the temporary registers. This allows to test user
settings without programming the EEPROM.
The addresses for the temporary registers are different from the EEPROM addresses. See Table 6 for details.
In order to access temporary registers send 0x8000 to address 25
hex
. Set to 0x0000 to leave the interface mode
and to change into normal operating mode until the next power down. The sensor uses the content of the
temporary registers instead of the correlating EEPROM values until the next power down.
Table 6 Temporary register description
Temporary
register address
EEPROM
register address
Note
25
hex
-
Write 0x8000 to this address to get access to the register
(otherwise the registers gets occupied / overwritten by the sensor)
01
hex
-
Write 0x0000 to temporary disables failure indications like CRC
check.
11
hex
40
hex
Bit description and bit position same for both addresses
12
hex
41
hex
Bit description and bit position same for both addresses
13
hex
42
hex
Bit description and bit position same for both addresses