Datasheet 29
Electrical Specifications
Notes:
1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2. The V
TTA
referred to in these specifications refers to instantaneous V
TTA
.
3. For Vin between 0 V and V
TTA
. Measured when the driver is tristated.
4. V
IH
and V
OH
may experience excursions above V
TT
.
5. COMP resistance must be provided on the system board with 1% resistors. See the applicable platform
design guide for implementation details. COMP0 resistors are to V
SS
.
2.11.2 V
CC
Overshoot Specification
The processor can tolerate short transient overshoot events where V
CC
exceeds the VID
voltage when transitioning from a high-to-low current load condition. This overshoot
cannot exceed VID + V
OS_MAX
(V
OS_MAX
is the maximum allowable overshoot above
VID). These specifications apply to the processor die voltage as measured across the
VCC_SENSE and VSS_SENSE lands.
Table 2-15. Control Sideband Signal Group DC Specifications
Symbol Parameter Min Typ Max Units Notes
1
V
IL
Input Low Voltage — — 0.64
*
V
TTA
V2
V
IH
Input High Voltage 0.76
*
V
TTA
——V2
V
OL
Output Low Voltage
——
V
TTA
* R
ON
/ (R
ON
+ R
sys_term
)
V2,4
V
OH
Output High Voltage V
TTA
——V2,4
Ron Buffer on Resistance 10 — 18 Ω
Ron
Buffer on Resistance for
VID[7:0]
— 100 —
Ω
I
LI
Input Leakage Current — — ± 200 μA3
COMP0 COMP Resistance 49.4 49.9 50.40 Ω 5
Table 2-16. V
CC
Overshoot Specifications
Symbol Parameter Min Max Units Figure Notes
V
OS_MAX
Magnitude of V
CCP
overshoot above VID — 50 mV 2-5
T
OS_MAX
Time duration of V
CCP
overshoot above VID — 25 µs 2-5
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