DM588 Service Manual
126
03
inductor
E20.90*3.0*2.5TR 1 L73
127
2CC1-20-C0G500-1
Multi-layer chip
,100,pF,±5%,50V,2012,C0G 1 L74
128
2CC1-20-C0G250-6
80J
Multi-layer chip
capacitor
,68,pF,±5%,0805 1 L75
yageo,RC1206JR-070RL,0,Ω,±5%,3216
130 2LW1-16UC-100GA
SMD wire wound
inductor
murata,LQW18AN10NG00,10,nH,±2%,
1608
1 L82
131 2RS1-16-272J R chip resistor
yageo,RC0603JR-072K7L,2.7,KΩ,±5%,
1608
2 L83,L84
132 2LW1-20UC-221J
R SMD wire wound
murata,LQW2BHNR22J03L,220,nH,±5
1 L316
℃
NXP,BFU550A,SOT-23,-40~150
℃
135 1TT1-2SC4617-R R SMD triode ROHM,2SC4617-R,EMT3,-~150 ℃ 1 Q4
136 1TT1-SSM3J15FS Switch triode TOSHIBA,SSM3J15FS,2-2H1B 1 Q5
137 1TT1-2SC5086 SMD triode TOSHIBA,2SC5086-O,2-2H1A,-~125
4 Q6,Q7,Q13,Q14
138
1TT1-BFU590Q-R0
R SMD triode NXP,BFU590Q,SOT-89,-40~150 ℃ 1 Q9
139
1TF1-SSM3K15AF
R SMD field effect
TOSHIBA,SSM3K15AFS,2-2H1B,-~150
℃
3 Q10,Q20,Q11
140 1TT1-BFU550X Silicon bipolar triode NXP,BFU550X,SOT-143,-40~150 ℃ 1 Q12
141 1TT1-2SC5108-Y R SMD triode TOSHIBA,2SC5108-Y,2-2H1A,-~125 ℃ 2 Q15,Q28
142 1TF1-ST2301
R SMD field effect
Stanson,ST2301,SOT-23-3L,-~150 ℃ 6 Q17,Q23,Q30,Q31,Q32,Q102
143
1TF1-RD01MUS2-5
01
E R SMD field effect
transistor
MITSUBISHI,RD01MUS2-501,S0T-89,-
~150 ℃
1 Q18
144 1TT1-DTA144EE R SMD triode ROHM,DTA144EE,EMT3,-~150 ℃ 1 Q19
83