EasyManua.ls Logo

Philips VES1.1E - 3.2 Features

Philips VES1.1E
79 pages
Print Icon
To Next Page IconTo Next Page
To Next Page IconTo Next Page
To Previous Page IconTo Previous Page
To Previous Page IconTo Previous Page
Loading...
3.2 Features
CMOS Technology
High Efficiency 85%
High PSRR 70 dB at 217 Hz
Differential OP-amp Input
AZAD2102B provides Vibration-Spectrum Modulation clock for reduce EMI
Provide Mute function (set Mute_B to GND will go into Mute status)
For the input stage AZAD2102B built-in a 10Kohm resistors (Gain
setting = 29.5 dB)
Maximum Battery Life and Minimum Heat
Efficiency With an 8 Ω
Speaker:
3.5 mA Quiescent Current
Output Power at 10% THD
2.85 Watts at AVdd = DVdd = 5.0 Volt, Rload = 4 Ω
1.45 Watts at AVdd = DVdd = 3.6 Volt, Rload =
0.30 Watts at AVdd = DVdd = 3.0 Volt, Rload =
1.75 Watts at AVdd = DVdd = 5.5 Volt, Rload =
0.87 Watts at AVdd = DVdd = 3.6 Volt, Rload =
0.41 Watts at AVdd = DVdd = 3.0 Volt, Rload =
Eliminate Power on and Power-off “Pop” noise
A fewer external components
Optimized PWM output stage eliminates LC output filter
Internally generate 290 kHz switching frequency to eliminate capacitor and resistor
Improve PSRR (–70 dB) and wide supply voltage (3.0 V to 5.5 V)
Fully differential design reduces RF rectification
This chip has been built-in a very strong ESD protection.
System level ESD 4 KV (IEC 61000-4-2 ESD Contact Level)
Wafer chip scale package (WCSP)
TSSOP package with exposed pad

Table of Contents

Related product manuals