Philips VES1.1E - FDC604 P; 21.1 General description; 21.2 Features; 21.3 Pinning

21 FDC604P
21.1 General description
This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench
process. It has been optimized for battery power management applications.
21.2 Features
• –5.5 A, –20 V. RDS(ON) = 33 mΩ @ VGS = –4.5 V
• RDS(ON) = 43 mΩ @ VGS = –2.5 V
• RDS(ON)
= 60 mΩ @ VGS = –1.8 V
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON)(S)
21.3 Pinning