Endress+Hauser iTEMP HART TMT162 - Page 46

Technical data TMT162
46 Endress+Hauser
Repeatability 0.0015% of the physical input range (16 Bit)
Resolution A/D conversion: 18 Bit
Influence of the supply voltage ≤ ±0.005%/V deviation from 24 V, related to the full scale value
Long-term stability ≤ 0.18 °F/year (≤ 0.1 °C/year) or ≤ 0.05%/year
Data under reference conditions. % relates to the set span. The larger value applies.
Influence of ambient
temperature (temperature
drift)
Total temperature drift = input temperature drift + output temperature drift (see example below)
Examples for calculation of accuracy:
• Example 1: input temperature drift Δϑ = 18 °F (10 °C), Pt100, span 32 to 212 °F (0 to 100 °C)
Maximum process value: 212 °F (100 °C)
Measured resistance value: 138.5 Ω (s. IEC751)
Typ. influence in Ω: (0.001% of 138.5 Ω) * 10 = 0.01385 Ω
Conversion Ω to °C: 0.01385 Ω / 0.4 Ω/°C = 0.03 °C (0.054 °F)
• Example 2: input temperature drift Δϑ = 18 °F (10 °C), thermocouple type K with span
32 to 1112 °F (0 to 600 °C)
Maximum process value: 1112 °F (600 °C)
Measured thermoelectric voltage: 24905 μV (s. IEC584)
Typ. influence in μV: (0.001% of 24905 μV) * 10 = 2.5 μV
Conversion Ω to °C: 2.5 μV / 40 μV/°C = 0.06 °C (0.11 °F)
• Example 3: output temperature drift Δϑ = 18 °F (10 °C), measuring range 32 to 212 °F (0 to
100 °C)
Span: 212 °F (100 °C)
Typical influence: (0.001% of 212 °F) * 10 = 0.02 °F (0.01 °C)
• Example 4: max. possible measured error Δϑ = 18 °F (10 °C), Pt100, measuring range 32 to
212 °F (0 to 100 °C)
Effect on the accuracy when ambient temperature changes by 1 °C (1.8 °F):
Input 10 to 400 Ω 0.001% of measured value
Input 10 to 2000 Ω 0.001% of measured value
Input -20 to 100 mV typ. 0.001% of measured value (maximum value = 1.5 x typ.)
Input -5 to 30 mV typ. 0.001% of measured value (maximum value = 1.5 x typ.)
Output 4 to 20 mA typ. 0.001% of span (maximum value = 1.5 x typ.)
Typical sensor resistance change when process temperature changes by 1 °C (1.8 °F):
Cu10: 0.04 Ω Pt200: 0.8 Ω Ni120: 0.7 Ω Cu50: 0.2 Ω Pt50: 0.2 Ω
Cu100, Pt100: 0.4 Ω Pt500: 2 Ω Pt1000: 4 Ω Ni100: 0.6 Ω Ni1000: 6 Ω
Typical change in thermoelectric voltage when process temperature changes by 1 °C (1.8 °F):
B: 10 μVC: 20 μVD: 20 μVE: 75 μVJ: 55 μVK: 40 μV
L: 55 μVN: 35 μVR: 12 μVS: 12 μVT: 50 μVU: 60 μV