Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2837)
Application : Audio and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SA1186
–150
–150
–5
–10
–2
100(Ta=25°C)
150
–55
to
+150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
■Typical Switching Characteristics (Common Emitter)
External Dimensions MT-100(TO3P)
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SA1186
–100
max
–100max
–150min
50min∗
–2.0max
60typ
110typ
Unit
µ
A
µ
A
V
V
MHz
pF
Conditions
V
CB=–150V
V
EB=–5V
I
C=–25mA
V
CE=–4V, IC=–3A
I
C=–5A, IB=–0.5A
V
CE=–12V, IE=1A
V
CB=–80V, f=1MHz
VCC
(V)
–60
RL
(Ω)
12
IC
(A)
–5
VB2
(V)
5
IB2
(mA)
500
ton
(
µ
s)
0.25typ
tstg
(
µ
s)
0.8typ
tf
(
µ
s)
0.2typ
IB1
(mA)
–500
hFE
–
I
C Characteristics
(Typical)
hFE
–
I
C
Temperature Characteristics (Typical)
θj-a
–
t Characteristics
Pc
–
Ta Derating
0
0
–2
–4
–6
–8
–10
–1 –2 –3 –4
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
–400mA
I
B
=–20mA
–200mA
–160mA
–120mA
–100mA
–80mA
–60mA
–40mA
0
–3
–2
–1
0 –0.5 –1.0 –2.0–1.5
Base Current I
B(A)
Collector-Emitter Saturation Voltage VCE(sat)(V)
IC=–10A
–5A
–0.02 –0.1 –1 –10
20
50
100
300
Collector Current I
C(A)
DC Current Gain hF E
(VCE=–4V)
Typ
Safe Operating Area (Single Pulse)
–2 –10 –100 –200
–0.2
–1
–0.5
–10
–30
–5
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
10ms
DC
Without Heatsink
Natural Cooling
fT
–
I
E Characteristics
(Typical)
0.02 0.1 1 10
0
20
40
60
80
Cut-off Frequency fT(MHZ )
(VCE=–12V)
Emitter Current I
E(A)
Typ
0.2
1
3
0.5
1 10 100 1000 2000
Time t(ms)
Transient Thermal Resistance θ j-a(˚C/W)
100
50
3.5
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC (W)
With Infinite heatsink
Without Heatsink
0
–10
–2
–6
–4
–8
0 –2–1
Base-Emittor Voltage V
BE(V)
Collector Current IC(A)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
(VCE=–4V)
–0.02 –0.1 –0.5 –1 –5–0.5 –5 –10
30
50
100
200
Collector Current I
C(A)
DC Current Gain hF E
125˚C
–30˚C
25˚C
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