Quectel SG560D Series - Page 53

Smart Module Series
SG560D_Series_Hardware_Design 52 / 134
LDO18B_1V8
336
PO
1.8 V output
(1.8 V output for I/O pull-up)
Keep on.
When using it, it is
recommended to add
1–4.7 μF bypass
capacitors with a total
capacitance not
exceeding 14.1 μF.
LDO17B_1V8
408
PO
1.8 V output
(1.8 V output for I/O power supply)
When using it, it is
recommended to add
1–4.7 μF bypass
capacitors with a total
capacitance not
exceeding 18.8 μF.
LDO12C_1V8
109
PO
1.8 V output
(1.8 V output for I/O power supply
of LCM)
When using it, it is
recommended to add
1–4 μF bypass
capacitors with a total
capacitance not
exceeding 4 μF.
LDO8C_1V8
112
PO
1.8 V output
(1.8 V output for sensors)
When using it, it is
recommended to add
1–4.7 μF bypass
capacitors with a total
capacitance not
exceeding 18.8 μF.
LDO3C_3V0
624
PO
3.0 V output
(reserved power)
When using them, it
is recommended to
add 1–4 μF bypass
capacitors with a total
capacitance not
exceeding 4 μF.
LDO2C_1V8
626
PO
1.8 V output
(reserved power)
VRTC
312
PIO
Power supply for RTC
USIM1_VDD
160
PO
(U)SIM1 card power supply
Either 1.8 V or 2.95 V
(U)SIM card is
supported and can be
identified
automatically by the
module.
When using them, it
is recommended to
add bypass
capacitors with a total
capacitance not
USIM2_VDD
172
PO
(U)SIM2 card power supply