• 3.3 V, 5 V TTL/CMOS input comparators with hysteresis
• Integrated bootstrap diode
• Fixed 320 ns deadtime
• Interlocking function
• Compact and simplified layout
• Bill of material reduction
• Flexible, easy and fast design
STL160N4F7 160 A STripFET™ F7 Power MOSFETs
This N-channel Power MOSFET uses STripFET™ F7 technology with an enhanced trench gate structure that
results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and
more efficient switching.
L7986, LD1117S50 and LD39050PU33R
These devices provide the appropriate voltage for gate driving, BEC output and MCU power.
2.1.2 STEVAL-ESC001V1 bottom side components
Bottom side componentry is mainly for the digital section; featuring an STM32F303 microcontroller for three-shunt
sensorless FOC control in an LQFP 48-pin package.
STM32F303xB 32-bit ARM Cortex-M4 MCU with 128 Kbytes Flash and 72 MHz CPU
The family of microcontrollers is based on the high-performance ARM
®
Cortex
®
-M4 32-bit RISC core plus FPU
operating at 72 MHz max and embedded memory protection unit (MPU).
Figure 7. Bottom side features
UM2197
STEVAL-ESC001V1 hardware overview
UM2197 - Rev 3
page 6/25
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