THOMSON 32E90NH22 - PHKD13 N03 LT FET Datasheet; Product Profile: Description and Features; Pinning Information

PHKD13N03LT
Dual TrenchMOS™ logic level FET
Rev. 01 — 23 June 2003 Product data
M3D315
1. Product profile
1.1 Description
Dual N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PHKD13N03LT in SOT96-1 (SO8).
1.2 Features
1.3 Applications
1.4 Quick reference data
2. Pinning information
■ Low gate charge ■ Surface mount package
■ Low on-state resistance ■ Fast switching.
■ Portable appliances ■ Notebook computers
■ Lithium-ion battery chargers ■ DC-to-DC converters.
■ V
DS
≤ 30 V ■ I
D
≤ 10.4 A
■ P
tot
≤ 3.57 W ■ R
DSon
≤ 20 mΩ
Table 1: Pinning - SOT96-1 (SO8), simplified outline and symbol
Pin Description Simplified outline Symbol
1 source1 (s1)
SOT96-1 (SO8)
2 gate1 (g1)
3 source2 (s2)
4 gate2 (g2)
5,6 drain2 (d2)
7,8 drain1 (d1)
4
5
1
8
Top view MBK187
d
MBK725
gs
d
1
1
1
1
d
gs
d
2
2
2
2