37 ACS2000 AFE 1MVA UM 3BHS297030 ZAB E01 REV. J
Phase module
The AFE consists of three identical phase modules
each housing the series-connected IGBT semicon-
ductors, the phase capacitor, the gate drivers, and
the interface board for communication with the
main control circuit board (AMC circuit board) of
the AFE.
The high voltage IGBT is a power semiconductor
switching device specially developed for medium
voltage drives. The device is based on well-estab-
lished transistor technology and combines high
speed switching capabilities with high blocking
voltage and low conduction losses as known from
GTOs.
Phase capacitor
Phase-INT circuit board
Gate drivers
Connectors
IGBT module, each module contains two
IGBTs
IGBT assembly on heat sink