Quectel RM510Q-GL - Digital I;O and (U)SIM Characteristics

5G Module Series
RM510Q-GL Hardware Design
RM510Q-GL_Hardware_Design 78 / 88
6.3. Digital I/O Characteristic
Table 47: Logic Levels of Digital I/O (1.8 V)
Table 48: (U)SIM 1.8 V I/O Requirements
5G NR-FDD n71 CH126900 @ 23 dBm
480
mA
5G NR-FDD n71 CH129400 @ 23 dBm
490
mA
WCDMA voice
call*
WCDMA B1 CH10700 @ 23 dBm
670
mA
WCDMA B2 CH9800 @ 23 dBm
730
mA
WCDMA B3 CH1338 @ 23 dBm
650
mA
WCDMA B4 CH1638 @ 23 dBm
600
mA
WCDMA B5 CH4408 @ 23 dBm
460
mA
WCDMA B6 CH4175 @ 23 dBm
460
mA
WCDMA B8 CH3012 @ 23 dBm
475
mA
WCDMA B19 CH338 @ 23 dBm
460
mA
Parameter
Description
Min.
Max.
Unit
V
IH
Input high voltage
1.65
2.1
V
V
IL
Input low voltage
-0.3
0.54
V
V
OH
Output high voltage
1.3
1.8
V
V
OL
Output low voltage
0
0.4
V
Parameter
Description
Min.
Max.
Unit
USIM_VDD
Power supply
1.65
1.95
V
V
IH
Input high voltage
0.7 × USIM_VDD
USIM_VDD + 0.3
V