After Sales
Technical Documentation
RAE/RAK–1N
RF
Page 3– 21
Amendment 1 04/97
Power amplifier
The power amplifier is a three stage discrete amplifier. It amplifies the 0
dBm ( 2 dBm in PCN) TX signal to the desired output level. It has been
specified for 5.5...8.5 volts operation. There are 5 x 330 mF capacitors in
the near vicinity of the power amplifier to alleviate supply voltage
degradation during TX burst.
Table 14. Power amplifier specification
Parameter Minimum Typical /
Nominal
Maximum Unit / Notes
DC supply voltage (no RF) 10 V
DC supply voltage 5.5 7.2 8.5 V
Operating frequency range
GSM
PCN
890
1710
915
1785
MHz
MHz
Operating case temp. range
GSM
PCN
90
90
deg.C
deg.C
Max Output power GSM
PCN
34.5
31.5
35
33
36
34.5
dBm, normal cond
dBm, normal cond
Max Output power GSM
PCN
33.5
31
34
32.5
35
34
dBm, extreme cond.
Vcc=5.4V, Ta = 55
C
Input power GSM
PCN
0
2
dBm
dBm
Gain GSM
PCN
34.5
29.5
35
31
36
32.5
dB, normal cond
dB, normal cond
Efficiency GSM
PCN
42
38
%, Pout = 35 dBm
%, Pout = 32 dBm
Input VSWR (Zo=50 ohms) 2.0
Output VSWR (Zo=50 ohms) 2.0
Harmonics: 2 f
0
3 f
0
, 4 f
0
, 5 f
0
–30
–40
dBc, Pout = 35 dBm
dBc, Pout = 32 dBm
Noise power GSM
PCN
–114
–114
dBm/Hz at RX band
dBm/Hz at RX band
Ruggedness VBATT GSM
VBATT PCN
8.0 V
T.B.D.
VSWR=7, Pout=4W
T.B.D.
Stability (load VSWR 8:1) –60 dBc, all spurious