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Quectel RM520N-GL - Electrostatic Discharge

Quectel RM520N-GL
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5G Module Series
RM520N-GL_Hardware_Design 71 / 84
Table 41: (U)SIM 3.0V I/O Requirements
6.4. Electrostatic Discharge
If the static electricity generated by various ways discharges to the module, the module maybe damaged
to a certain extent. Thus, please take proper ESD countermeasures and handling methods. For example,
wearing anti-static gloves during the development, production, assembly and testing of the module;
adding ESD protective component to the ESD sensitive interfaces and points in the product design of the
module.
Table 42: Electrostatic Discharge Characteristics (Temperature: 25 ºC , Humidity: 40 %)
Parameter
Description
Min.
Max.
Unit
USIM_VDD
Power supply
2.7
3.05
V
V
IH
Input high voltage
0.7 × USIM_VDD
USIM_VDD + 0.3
V
V
IL
Input low voltage
-0.3
0.2 × USIM_VDD
V
V
OH
Output high voltage
0.8 × USIM_VDD
USIM_VDD
V
V
OL
Output low voltage
0
0.4
V
Tested Interfaces
Contact Discharge
Air Discharge
Unit
VCC, GND
±5
±10
kV
Antenna Interfaces
±4
±8
kV
Other Interfaces
±0.5
±1
kV

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