Alinco DR-620 - Page 25

Nch MOS FET
RD70VHF1 (XE0047)
ABSO LUTE M AXIM UM RATING
Symbol Test conditions Rating Unit
Pch Tc=25°C 150 W
VDSS Vgs=0V 30 V
VGSS Vds=0V ±20 V
Tj
+175 °C
Tstg -4 0 ~ +125 °C
ELECTR ICA L C HAR ACTERISTIC (Ta=25°C)
Param eter Symbol Test conditions
Limits
Unit
Min M ax
Saturated drain current IDSS Vds=17V, Vgs=0V 300
|jA
Gate to source leakage current IG SS Vds=10V, Vgs=0V 5
|jA
Threshold voltage Vth Vds=12V, Ids=1ma 1.3 2.3
V
Output power 1 Po1 f=175M Hz, Pin=6W
Vds=12.5V
Ids(idle)=2.0A
70
W
Drain officiency 1 n D i 55
%
Output power 2 Po2
f=520M Hz, Pin=10W
Vds=12.5V
Ids(idle)=2.0A
50
W
Drain officiency 2 nD 2 50
%
25