After Sales
Technical Documentation
RAE/RAK–1N
PDA Hardware
Page 6 – 38
Original, 08/96
– 1M*16bit FLASH memory 120 ns
– Intel 28F016SV 070
– 120 ns maximum read access time
– SMART voltage device with 5 Volt programming
– Used to store application data under FLASH File System
– 1 Million Erase Cycles Per Block
– Deep power down mode
– 1M*16bit DRAM memory
– 70 ns maximum access time
– Fast Page Mode
– CAS before RAS refresh
– CAS before RAS self refresh
– Refresh block size 1K
– QWERTY–keypad
– Hard top rubber keymat with carbon contacts
– 56 QWERTY keys and 9 function keys
– Key ON resistance < 1kohm
– VT100 emulation compatibility keys included
To Next Page
Loading...