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Atmel AT90S2313 User Manual

Atmel AT90S2313
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AT90S2313
39
Caution: An interrupt between step 4 and step 5 will make the write cycle fail, since the EEPROM Master Write Enable will
time-out. If an interrupt routine accessing the EEPROM is interrupting another EEPROM access, the EEAR or EEDR regis-
ter will be modified, causing the interrupted EEPROM access to fail. It is recommended to have the global interrupt flag
cleared during the 4 last steps to avoid these problems.
Bit 0 - EERE: EEPROM Read Enable
The EEPROM Read Enable Signal EERE is the read strobe to the EEPROM. When the correct address is set up in the
EEAR register, the EERE bit must be set. When the EERE bit is cleared (zero) by hardware, requested data is found in the
EEDR register. The EEPROM read access takes one instruction and there is no need to poll the EERE bit. When EERE
has been set, the CPU is halted for two cycles before the next instruction is executed.
The user should poll the EEWE bit before starting the read operation. If a write operation is in progress when new data or
address is written to the EEPROM I/O registers, the write operation will be interrupted, and the result is undefined.
Prevent EEPROM Corruption
During periods of low V
CC,
the EEPROM data can be corrupted because the supply voltage is too low for the CPU and the
EEPROM to operate properly. These issues are the same as for board level systems using the EEPROM, and the same
design solutions should be applied.
An EEPROM data corruption can be caused by two situations when the voltage is too low. First, a regular write sequence
to the EEPROM requires a minimum voltage to operate correctly. Secondly, the CPU itself can execute instructions incor-
rectly, if the supply voltage for executing instructions is too low.
EEPROM data corruption can easily be avoided by following these design recommendations (one is sufficient):
1. Keep the AVR RESET active (low) during periods of insufficient power supply voltage. This is best done by an
external low V
CC
Reset Protection circuit, often referred to as a Brown-Out Detector (BOD). Please refer to applica-
tion note AVR 180 for design considerations regarding power-on reset and low voltage detection.
2. Keep the AVR core in Power Down Sleep Mode during periods of low V
CC
. This will prevent the CPU from attempt-
ing to decode and execute instructions, effectively protecting the EEPROM registers from unintentional writes.
3. Store constants in Flash memory if the ability to change memory contents from software is not required. Flash
memory can not be updated by the CPU, and will not be subject to corruption.
UART
The AT90S2313 features a full duplex (separate receive and transmit registers) Universal Asynchronous Receiver and
Transmitter (UART). The main features are:
Baud rate generator that can generate a large number of baud rates (bps)
High baud rates at low XTAL frequencies
8 or 9 bits data
Noise filtering
Overrun detection
Framing Error detection
False Start Bit detection
Three separate interrupts on TX Complete, TX Data Register Empty and RX Complete
Data Transmission
A block schematic of the UART transmitter is shown in Figure 34.
Data transmission is initiated by writing the data to be transmitted to the UART I/O Data Register, UDR. Data is transferred
from UDR to the Transmit shift register when:
A new character has been written to UDR after the stop bit from the previous character has been shifted out. The shift
register is loaded immediately.
A new character has been written to UDR before the stop bit from the previous character has been shifted out. The shift
register is loaded when the stop bit of the character currently being transmitted has been shifted out.
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Atmel AT90S2313 Specifications

General IconGeneral
ArchitectureAVR
Flash Memory2 KB
SRAM128 bytes
EEPROM128 bytes
I/O Pins15
ADCNo
Timers1 x 8-bit, 1 x 16-bit
Data Bus Width8-bit
Instruction Set ArchitectureRISC
ManufacturerAtmel
CoreAVR
PackageSOIC

Summary

Features of AT90S2313 Microcontroller

AVR RISC Architecture

High-performance, low-power RISC architecture with single clock cycle execution.

Memory Features

2K Flash, 128B SRAM, 128B EEPROM with endurance specifications.

Peripheral Features

Includes timers, PWM, comparator, Watchdog, SPI, and UART modules.

Pin Configuration

Pin Descriptions

Architectural Overview

General Purpose Register File

In-System Programmable Flash Program Memory

EEPROM Data Memory

SRAM Data Memory Organization

Program and Data Addressing Modes

Memory Access and Instruction Execution Timing

I/O Memory Map

Status Register - SREG

Reset and Interrupt Handling

Reset Sources

Power-On Reset

External Reset

Watchdog Reset

Interrupt Handling

External Interrupts

MCU Control Register - MCUCR

Sleep Modes

Power Down Mode

Oscillator stopped; wake-up via external reset or interrupt.

Timer/Counters Overview

8-bit Timer/Counter0

Timer/Counter0 Control Register - TCCR0

16-bit Timer/Counter1

Timer/Counter1 Control Register A - TCCR1A

Timer/Counter1 Control Register B - TCCR1B

Timer/Counter1 - TCNT1H and TCNT1L

Timer/Counter1 Output Compare Register A

Timer/Counter1 Input Capture Register

Timer/Counter1 in PWM Mode

Watchdog Timer Functionality

Watchdog Timer Control Register - WDTCR

EEPROM Read/Write Access

EEPROM Control Register - EECR

Prevent EEPROM Corruption

UART Overview

UART Data Reception

UART Control

UART Control Register - UCR

Baud Rate Generator Functionality

Analog Comparator Overview

Analog Comparator Control and Status Register - ACSR

Analog Comparator Control Bits

Port B Description

Alternate Functions of Port B

Port D Description

Alternate Functions of Port D

Memory Programming Overview

Fuse Bits Configuration

Programming the Flash and EEPROM

Parallel Programming Interface

Enter Programming Mode

Chip Erase Procedure

Programming the Flash Memory

Reading the Flash Memory

Programming the EEPROM Memory

Reading the EEPROM Memory

Programming the Fuse Bits

Programming the Lock Bits

Parallel Programming Characteristics

Serial Downloading Procedure

Serial Programming Algorithm

Serial Programming Characteristics

Electrical Characteristics

Absolute Maximum Ratings

Operating limits to prevent device damage.

DC Characteristics

Register Summary

Instruction Set Summary

Instruction Set Summary (Continued)

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