Harman Kardon AVR 151/230C - Page 44

〈Transistor〉
ＲＴ１Ｎ１４４Ｘ SERIES
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
ISAHAY
A
ELECTRONIC
S
CORPORATION
MAXIMUM RATING (Ta=25℃)
RATING
SYMBOL PARAMETER
RT1N144T2 RT1N144U RT1N144M RT1N144C RT1N144S
UNIT
Ｖ
ＣＢＯ
Collector to Base voltage 50 V
Ｖ
ＥＢＯ
Emitter to Base voltage 6 V
Ｖ
ＣＥＯ
Collector to Emitter voltage 50 V
Ｉ
Ｃ
Collector current 100 mA
Ｉ
ＣＭ
Peak Collector current 200 mA
Ｐ
Ｃ
Collector dissipation(Ta=25℃) 125（※） 150 200 450 mW
Ｔｊ Junction temperature +125 +150 ℃
Ｔｓｔｇ Storage temperature -55〜+125 -55〜+150 ℃
（※） package mounted on 9mm×19mm×1mm glass-epoxy substrate.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
LIMIT
SYMBOL PARAMETER TEST CONDITION
MIN TYP MAX
UNIT
Ｖ
（ＢＲ）ＣＥＯ
C to E break down voltage I
C
=100μA，R
BE
=∞ 50 V
Ｉ
ＣＢＯ
Collector cut off current V
CB
=50V，I
E
=0 0.1 μA
ｈ
ＦＥ
DC forward current gain V
CE
=5V，I
C
=5mA 50 −
Ｖ
ＣＥ（ｓａｔ）
C to E saturation voltage I
C
=10mA，I
B
=0.5mA 0.1 0.3 V
Ｖ
Ｉ（ＯＮ）
Input on voltage V
CE
=0.2V，I
C
=5mA 1.0 1.8 V
Ｖ
Ｉ（ＯＦＦ）
Input off voltage V
CE
=5V，I
C
=100μA 0.4 0.7 V
Ｒ
１
Input resistance 7.0 10 13 kΩ
Ｒ
２
／Ｒ
１
Resistance ratio 4.2 4.7 5.1
ｆ
Ｔ
Gain band width product V
CE
=6V，I
E
=-10mA 200 MHz
COLLECTOR DISSIPATION
VS AMBIENT TEMPERTURE
0
100
200
300
400
500
600
0 25 50 75 100 125 150 175
AMBIENT TEMPERTURE Ta (℃)
COLLECTOR DISSIPATION Pc (mW)
RT1N144T2
RT1N144U
RT1N144C
RT1N144M
RT1N144S
Harman Kardon
A
VR 151 Service Manual
Page 44 of 131