〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
CORPORATION
MAXIMUM RATING (Ta=25℃)
RATING
SYMBOL PARAMETER
RT1N144T2 RT1N144U RT1N144M RT1N144C RT1N144S
UNIT
V
CBO
Collector to Base voltage 50 V
V
EBO
Emitter to Base voltage 6 V
V
CEO
Collector to Emitter voltage 50 V
I
C
Collector current 100 mA
I
CM
Peak Collector current 200 mA
P
C
Collector dissipation(Ta=25℃) 125(※) 150 200 450 mW
Tj Junction temperature +125 +150 ℃
Tstg Storage temperature -55〜+125 -55〜+150 ℃
(※) package mounted on 9mm×19mm×1mm glass-epoxy substrate.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
LIMIT
SYMBOL PARAMETER TEST CONDITION
MIN TYP MAX
UNIT
V
(BR)CEO
C to E break down voltage I
C
=100μA,R
BE
=∞ 50 V
I
CBO
Collector cut off current V
CB
=50V,I
E
=0 0.1 μA
h
FE
DC forward current gain V
CE
=5V,I
C
=5mA 50 −
V
CE(sat)
C to E saturation voltage I
C
=10mA,I
B
=0.5mA 0.1 0.3 V
V
I(ON)
Input on voltage V
CE
=0.2V,I
C
=5mA 1.0 1.8 V
V
I(OFF)
Input off voltage V
CE
=5V,I
C
=100μA 0.4 0.7 V
R
1
Input resistance 7.0 10 13 kΩ
R
2
/R
1
Resistance ratio 4.2 4.7 5.1
f
T
Gain band width product V
CE
=6V,I
E
=-10mA 200 MHz
COLLECTOR DISSIPATION
VS AMBIENT TEMPERTURE
0
100
200
300
400
500
600
0 25 50 75 100 125 150 175
AMBIENT TEMPERTURE Ta (℃)
COLLECTOR DISSIPATION Pc (mW)
RT1N144T2
RT1N144U
RT1N144C
RT1N144M
RT1N144S
Harman Kardon
VR 151 Service Manual
Page 44 of 131