Reference
370B User Manual
3-51
Common Measurements for Bipolar Transistors.
(Static)
The static forward current transfer ratio (emitter grounded), h
FE
, is I
C
/I
B
.
H
FE
can be measured with the Dot cursor. The h
FE
of the device under test is
displayed in the b OR gm/DIV readout.
(Small Signal)
The forward current transfer ratio of small-signal (emitter grounded), h
FE
,
is DI
C
/DI
B
. To determine h
FE
at various points in a family of curves,
multiply the vertical separation of two adjacent curves by the b OR gm/DIV
readout or use the Window cursor (refer to Step Generator in the FIRST
TIME OPERATION portion of this section).
V
CE
(Sat)
Saturation current and voltage is measured by expanding the display of the
saturation region of the device by decreasing the horizontal deflection factor
with the HORIZONTAL control or the MAG switch. Saturation current can
be adjusted to the desired operating point with the STEP AMPLITUDE
switch.
I
C
vs V
BE
Base-emitter voltage can be measured by setting the HORIZONTAL control
to the BASE/EMITTER range.
I
CEO
and BV
CEO
Collector-emitter leakage current and collector-emitter breakdown voltage
(base open) are measured by setting the CONFIGURATION to BASE OPEN
(EXT). For small leakage currents set the Collector Supply POLARITY to
LEAKAGE. To measure breakdown voltage, increase both the horizontal
deflection factor and the collector supply voltage.
I
CES
and BV
CES
Collector-emitter leakage current and collector-emitter breakdown voltage
(base shorted to emitter) are measured the same as I
CEO
and BV
CEO
, except
that the CONFIGURATION is set to BASE SHORT.
I
CER
and BV
CER
Collector-emitter leakage current and collector-emitter breakdown voltage
(with a specified resistance between the base terminal and the emitter
terminal) are measured the same as I
CEO
and BV
CEO
except that a specified
resistance is connected between the base terminal and the emitter terminal.
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