Alcatel IPUP A100 - Gas Purge and Temperature for Semiconductor Processes

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Alcatel Vacuum Technology France --- IPUP A100 Instruction manual
Gas purge and temperature
according to the semiconductor
processes
Processes Pump
pressure
regulator
adjustment
N2
(1)
IPUP A100
Temp.
C
L
E
A
N
Load--lock and transfer chamber pumping
Sputtering
IPUP
A100L
0
0
0
0
--
--
M
E
D
I
U
M
Dielectric etch
Stripping
Resist and polyamid etch
Metal etch (Al, W, Ta, Ti, TiN)
Polysilicon etch
Ion implant (source)
Tungsten CVD (W CVD)
Titanium and Titanium nitride CVD (Ti, TiN CVD)
Silicon epitaxy
SiO
2
CVD using silane as silicon source
Polysilicon CVD
Undoped SiO
2
HDPCVD
IPUP
A100P
0.5 bar
0.5 bar
0.5 bar
0.5 bar
0.5 bar
1 bar
1 bar
1 bar
1.5 bar
1 bar
1 bar
1 bar
20 slm
20 slm
20 slm
20 slm
20 slm
35 slm
35 slm
35 slm
50 slm
35 slm
35 slm
35 slm
not regul.
not regul.
not regul.
105 °C
95 °C
not regul.
not regul.
not regul.
95 °C
95 °C
95 °C
95 °C
not regul.
not regul.
not regul.
221 °F
203 °F
not regul.
not regul.
not regul.
203 °F
203 °F
203 °F
203 °F
HARSH
Non doped SiO
2
CVD using TEOS
Doped SiO
2
CVD using TEOS (PSG, BSG, BPSG)
SACVD oxide using TEOS
Silicon nitride and nitroxide PECVD
Silicon nitride LPCVD
MOCVD doped using phosphorus
Doped SiO
2
CVD using phosphorus, boron or fluorine HDPCVD
IPUP
A100P
1 bar
1.5 bar
1.5 bar
1.5 bar
1.5 bar
1.5 bar
1.5 bar
35 slm
50 slm
50 slm
50 slm
50 slm
50 slm
50 slm
95 °C
105 °C
105 °C
115 °C
115 °C
95 °C
105 °C
203 °F
221 °F
221 °F
239 °F
239 °F
203 °F
221 °F
(1)
N2 values are given in standard liter per minute.. . . .. .. .
These are the minimum nitrogen flow rates that should be
used according to these baseline processes.
More N2 should be used as necessary.
In any case, water flow rate is 100 l/h min.
Note : This table is only for information. It can be adapted to specific
customer process.
l For any other processes or chemicals not referenced above,
contact ALCATEL for compatibility.
G
B
0
0
5
3
9