351
7679H–CAN–08/08
AT90CAN32/64/128
are meant to contain 0xFF, can be skipped. This does not apply if the EEPROM is re-pro-
grammed without chip erasing the device. In this case, data polling cannot be used for the value
0xFF, and the user will have to wait at least t
WD_EEPROM
before programming the next byte. See
Table 25-14 for t
WD_EEPROM
value.
Figure 25-8. Serial Programming Waveforms
Table 25-14. Minimum Wait Delay Before Writing the Next Flash or EEPROM Location
Symbol Minimum Wait Delay
t
WD_FUSE
4.5 ms
t
WD_FLASH
4.5 ms
t
WD_EEPROM
9.0 ms
t
WD_ERASE
9.0 ms
MSB LSB
LSB
SERIAL CLOCK INPUT
(SCK)
SERIAL DATA INPUT
(MOSI-PDI)
(MISO-PDO)
Sample
SERIAL DATA OUTPUT
MSB
Table 25-15. Serial Programming Instruction Set
Set
a = address high bits, b = address low bits, H = 0 - Low byte, 1 - High Byte, o = data out, i = data in, x = don’t care
Instruction
Instruction Format
(1)
Operation
(1)
Byte 1 Byte 2
(2)
Byte 3 Byte4
Programming
Enable
1010 1100 0101 0011 xxxx xxxx xxxx xxxx Enable Serial Programming after RESET
goes low.
Chip Erase 1010 1100 100x xxxx xxxx xxxx xxxx xxxx Chip Erase EEPROM and Flash.
Read
Program Memory
0010 H000 aaaa aaaa bbbb bbbb oooo oooo
Read H (high or low) data o from Program memory at
word address a:b.
Load
Program Memory
Page
0100 H000 000x xxxx xbbb bbbb iiii iiii
Write H (high or low) data i to Program Memory page
at word address b. Data low byte must be loaded
before Data high byte is applied within the same
address.
Write
Program Memory
Page
0100 1100 aaaa aaaa bxxx xxxx xxxx xxxx Write Program Memory Page at address a:b.
Read
EEPROM Memory
1010 0000 000x aaaa bbbb bbbb oooo oooo Read data o from EEPROM memory at address a:b.
Write
EEPROM Memory
1100 0000 000x aaaa bbbb bbbb iiii iiii Write data i to EEPROM memory at address a:b.
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