Section VI
Model 4 342A
Table 6-2
Table 6-2. Reference Designation Index (Cont’d)
Reference
Designation
Part No. Description Note
A7
04342-7707 Q-LIMIT SELECTOR ASS’Y
04342-8707 BOARD :BLANK PC
A7Cl
0160-2964 C:FXD CER 0. OlpF -20% +80%
A7C2 015020121
C:FXD CER 0. 1pF -20% +80%
A7C3
0160-0155 C:FXD MY 0.0033pF 10% 200VDCW
A7C4 0180-0373
C:FXD TA 0. 68yF 10% 35VDCW
A7C5
0180-0116 C:FXD TA 6.8pF 10% 35VDCW
A7C6 0160-0128 C:FXD CER 2.2pF 20% 25VDCW
A7C7 0160-0155 C:FXD MY 0.0033pF 10% BOOVDCW
A7C8 0180-0116 C:FXD TA 6.8yF 10% 35VDCW
A7CRl 1902-3059
A7CR2 1902-3234
A7CR3
1910-0016
A7CR4 1902-3149
A7CR5
1901-0025
A7CR6 1901-0025
A7Kl 0490-0214
A7Ll 9140-0210
A7L2 9140-0210
A7Ql 1855-0081
A7Q2
1855-0081
A7Q3 1854-0071
A7Q4
1854-0071
A7Q5 1854-0071
A7Q6 1854-0071
A7Q7 1854-0298
A7Q8 1854-0071
A7Q9 1854-0071
A7Rl
0757-1094
A7R2 0757-0280
A7R3 2100-3353
A7R4 0698-3157
A7R5 0757-0199
A7R6 0698-3245
A7R7 2100-3356
A7R8
0698-3445
A7R9
0698-3429
A7RlO
0757-0458
SEMICON DEVICE:DIODE BREAKDOWN 3.83V 5% 400mW
SEMICON DEVICE:DIODE BREAKDOWN 19.6V 5% 400mW
SEMICON DEVICE :DIODE GERMANIUM
SEMICON DEVICE:DIODE BREAKDOWN 9.09V 5% 400mW
SEMICON DEVICE :DIODE SILICON
SEMICON DEVICE :DIODE SILICON
RELAY REED:DPST 8.7 - 22VDCW 0.5A, 15VA SRG-13A
COIL:FXD RF 1OOpH 5%
COIL:FXD RF 1OOpH 5%
TRANSISTOR:FIELD EFFECT N-CHANNEL
TRANSISTOR:FIELD EFFECT N-CHANNEL
TRANSISTOR :NPN SILICON 2N3391
TRANSISTOH:NPN SILICON 2N3391
TRANSISTOR:NPN SILICON 2N3391
TRANSISTOR :NPN SILICON 2N3391
TRANSISTOR :NPN SILICON
TRANSISTOR:NPN SILICON 2N3391
TRANSISTOR:NPN SILICON 2N3391
R:FXD MET FLM 1.47kfi 1% 1/8W
R:FXD MET FLM lka 1% 1,‘8W
R:VAR CERMET 20kR 10% 1/2W
R:FXD MET FLM 19.6k0 1% 1/8W
R:FXD MET FLM 21.5kSt 1% 1/8W
R:FXD MET FLM 20.5kS1 1% 1/8W
R:VAR CERMET 200kR 10% 1/2W
R:FXD MET FLM 34852 1% 1,‘8W
R:FXD MET FLM 19.6fi 1% li/8W
R:FXD MET FLM 5l.lkR 1% 1/8W
See list of abbreviations in introduction to this section
6-14
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