Rev 2015-03-02 8
GV10x OPERATION AND SAFETY MANUAL
surfaces. With Downstream Ashing, surfaces and specimens are quickly cleaned and remain free
of spurious artifacts frequently seen with typical “plasma cleaning”.
Oxygen [O] radicals are the active species produced using ambient air or oxygen gas mixtures as
the plasma gas. The vacuum chamber on which the Source is mounted will be cleaned as the O
radicals are transported downstream from the Source to the pumping port. The steady-state
pressure in the chamber during GV10x operation depends upon both the pumping speed and the
conductance of gas through the Source. This conductance can be controlled by a Variable
Constriction Needle Valve on the Source. Elevated surface temperatures volatize bound HC
contamination, so baking before or during the DS Process is suggested for heavily contaminated
surfaces.
The unique GV10x Source yields high concentration of reactive O neutrals over an operating
pressure of 2.0 Torr to <5 mTorr. At low pressures, O neutrals are transported more uniformly
throughout the chamber. Low pressure also permits the operation of the GV0x while the turbo
molecular pump (TMP) is rotating at full speed, without pump damage or shut down. RF power
from 10 to 99 Watts can be change while operating. As the RF power delivered to the Source is
increased, more O neutrals are developed in the downstream for greater HC ashing efficiency.
1.2 GV10x System Models
The GV10x System is an in situ plasma device consisting of two physical components:
1) a Source that generates plasma used for downstream ashing and
2) a Controller that generates up to 100 Watts of RF power that is fed to the Source.
GV10x BT Controller + GV10x P3 Source
GV10x BT Controller + GV10x P4 Source
GV10x BT Controller + GV10x P5 Source
GV10x 2U Controller + GV10x P3 Source
GV10x 2U Controller + GV10x P4 Source
GV10x 2U Controller + GV10x P5 Source
(B for benchtop, R for rack mount)
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