SanDisk CompactFlash - Attribute Memory Write Timing Specification

CompactFlash Memory Card Product Manual
SanDisk CompactFlash Memory Card Product Manual © 1998 SANDISK CORPORATION 31
4.3.7 Attribute Memory Write Timing
Specification
The Card Configuration write access time is
defined as 250 ns. Detailed timing specifications
are shown in Table 4-4.
Note: SanDisk does not allow writing from the Host to
CIS Memory. Only writes to the Configuration
register are allowed.
Table 4-4 Attribute Memory Write Timing
Speed Version 250 ns
Item Symbol IEEE Symbol Min ns Max ns
Write Cycle Time tc(W) tAVAV 250
Write Pulse Width tw(WE) tWLWH 150
Address Setup Time tsu(A) tAVWL 30
Write Recovery Time trec(WE) tWMAX 30
Data Setup Time for WE tsu(D-WEH) tDVWH 80
Data Hold Time th(D) tWMDX 30
An
-WE
-CE
Din
tc(W)
tsu(D-WEH)
tsu(A)
th(D)
trec(WE)
tw(WE)
Data In Valid
-OE
-Reg
Figure 4-2 Attribute Memory Write Timing Diagram
Notes: All times are in nanoseconds.
Din signifies data provided by the system to the CompactFlash Memory Card.