SanDisk CompactFlash User Manual

CompactFlash Memory Card Product Manual
SanDisk CompactFlash Memory Card Product Manual © 1998 SANDISK CORPORATION28
4.3 Electrical Specification
The following table defines all D.C.
Characteristics for the CompactFlash Memory
Card Series.
Unless otherwise stated, conditions are:
SDCFB-XX SDCFBI-XX
Vcc = 5V ±10% Vcc = 5V ± 5%
Vcc = 3.3V ± 5% Vcc = 3.3V ± 5%
Ta = 0°C to 60°C Ta = -40°C to 85°C
Absolute Maximum conditions are:
Vcc = -0.3V min. to 7.0V max.
V* = -0.5V min. to Vcc + 0.5V max.
* Voltage on any pin except Vcc with respect
to GND.
4.3.1 Input Leakage Current
Note: In the table below, x refers to the characteristics described in section 4.3.2. For example, I1U indicates a
pull up resistor with a type 1 input characteristic.
Type Parameter Symbol Conditions MIN TYP MAX Units
IxZ Input Leakage Current IL Vih = Vcc / Vil = Gnd -1 1 µA
IxU Pull Up Resistor RPU1 Vcc = 5.0V 50k 500k Ohm
IxD Pull Down Resistor RPD1 Vcc = 5.0V 50k 500k Ohm
Note: The minimum pullup resistor leakage current meets the PCMCIA specification of 10k ohms but is
intentionally higher in the CompactFlash Memory Card Series product to reduce power use.
4.3.2 Input Characteristics
Type Parameter Symbol MIN TYP MAX MIN TYP MAX Units
VCC = 3.3 V VCC = 5.0 V
1 Input Voltage
CMOS
Vih
Vil
2.4
0.6
2.4
0.8
Volts
2 Input Voltage
CMOS
Vih
Vil
1.5
0.6
2.0
0.8
Volts
3 Input Voltage
CMOS
Schmitt Trigger
Vth
Vtl
1.8
1.0
2.8
2.0
Volts

SanDisk CompactFlash Specifications

General

Brand	SanDisk
Model	CompactFlash
Category	Storage
Language	English