Table 24: Modbus memory map: programming variables (Table 9)
Capacitive and Inductive Hysteresis
Configuration variable Address Valid data window Default value
Capacitive hysteresis 1185
0 -10 ( Value x 100) 0
Inductive hysteresis 1186
Table 25:Modbus memory map: programming variables (Table 10)
C/K factor
Configuration variable Address Valid data window Default value
C/K factor 1138 0 - 100 (Value x 100) 100
Table 26:Modbus memory map: programming variables (Table 11)
Program
Configuration variable Address Valid data window Default value
Program 1139 1111-1999 1111
Table 27:Modbus memory map: programming variables (Table 12)
No. of stages
Configuration variable Address Valid data window Default value
No. of stages 113B
0-6 (Computer SMART III 6)
0-12 (Computer SMART III 12)
0-14 (Computer SMART III 14)
6
12
14
Table 28:Modbus memory map: programming variables (Table 13)
Connection and reclosing time
Configuration variable Address Valid data window Default value
Connection time 113C 0-999 seconds 10
Reclosing time 113D 0-999 seconds 50
Table 29:Modbus memory map: programming variables (Table 14)
Alarm: Voltage THD
Configuration variable Address Valid data window Default value
Low Value 1140 0 - 100 % 5
Hi Value 1141 0 - 100 % 8
Table 30:Modbus memory map: programming variables (Table 15)
Alarm: Current x I THD
Configuration variable Address Valid data window Default value
Low Value 1142 0 ... 9999 A 4
Hi Value 1143 0 ... 9999 A 5
Table 31:Modbus memory map: programming variables (Table 16)
Alarm: Temperature
Configuration variable Address Valid data window Default value
Low Value 1144 0 - 80 ºC 65
Hi Value 1145 0 - 80 ºC 70
Table 32:Modbus memory map: programming variables (Table 17)
Alarm: Leakage Current
Configuration variable Address Valid data window Default value
Search for the responsible stage 1146 0 (OFF), 1 (ON) 0
Value 1147 10 - 1000 mA 300
Stages enabled 1148 0 (No), 1 (Yes) 0
67
Instruction Manual
Computer SMART III