Sony HBD-E4100 - Page 66

HBD-E2100/E3100/E3200/E4100/E6100
66
Pin No. Pin Name I/O Description
P91 RDQM1 O Memory data mask bit 1
P92 DDRVCCK_2 - 1.2V Digital Power
P93 DDRVREF I Memory VREF
P94 RDQS0 I/O Memory positive data strobe bit 0
P95 RDQS0_ I/O Memory negative data strobe bit 0
P96 DDRVCCIO_2 - 1.5V Digital IO power
P97 RCLK0_ O Memory clock 0 negative
P98 RCLK0 O Memory clock 0 positive
P99 RDQM0 O Memory data mask bit 0
P100 RDQS1 I/O Memory positive data strobe bit 1
P101 RDQS1_ I/O Memory negative data strobe bit 1
P102 DDRVCCIO_3 - 1.5V Digital IO power
P103 RDQ12 I/O Memory data bit 12
P104 RDQ14 I/O Memory data bit 14
P105 RDQ10 I/O Memory data bit 10
P106 RDQ8 I/O Memory data bit 8
P107 RDQ1 I/O Memory data bit 1
P108 DDRVCCIO_4 - 1.5V Digital IO Power
P109 RDQ3 I/O Memory data bit 3
P110 RDQ7 I/O Memory data bit 7
P111 RDQ5 I/O Memory data bit 5
P112 DDRVCCK_3 - 1.2V Digital Power
P113 AVDD33_MEMPLL - 3.3 V Analog Power for MEMPLL
P114 TP_MEMPLL - Test Pin
P115 TN_MEMPLL - Test Pin
P116 RCKE O Memory clock enable
P117 RA10 O Memory address bit 10
P118 RBA1 O Memory bank address bit 1
P119 RA4 O Memory address bit 4
P120 RA1 O Memory address bit 1
P121 RA6 O Memory address bit 6
P122 RA8 O Memory address bit 8
P123 DDRVCCIO_5 - 1.5V Digital IO Power
P124 RA11 O Memory address bit 11
P125 RA12 O Memory address bit 12
P126 RRAS_ O Memory row address strobe
P127 RCAS_ O Memory column address strobe
P128 RCS_ O Memory chip select
P129 DDRVCCIO_6 - 1.5V Digital IO Power
P130 RWE_ O Memory write enable
P131 RA0 O Memory address bit 0
P132 RA13 O Memory address bit 13
P133 RA9 O Memory address bit 9
P134 RRESET O Memory reset
P135 RA7 O Memory address bit 7
P136 RA2 O Memory address bit 2
P137 RA5 O Memory address bit 5
P138 RA3 O Memory address bit 3
P139 RBA2 O Memory bank address bit 2
P140 RBA0 O RBA0
P141 RODT O Memory on die termination enable
P142 RCSX_ O Memory chip select
P143 DDRVCCIO_7 - 1.5V Digital IO Power
Ver. 1.5