ST L6470H - Electrical Characteristics Details; General Electrical Parameters; Charge Pump Characteristics; Output DMOS Transistor Performance

L6470 Electrical characteristics
Doc ID 16737 Rev 2 11/64
3 Electrical characteristics
V
SA
= V
SB
= 36 V; V
DD
= 3.3 V; internal 3 V regulator; T
J
= 25°C, unless otherwise specified.
Table 4. Electrical characteristics
Symbol Parameter Test condition Min Typ Max Unit
General
V
SthOn
V
S
UVLO turn on threshold 7.5 8.2 8.9 V
V
SthOff
V
S
UVLO turn off threshold 6.6 7.2 7.8 V
V
SthHyst
V
S
UVLO threshold hysteresis 0.7 1 1.3 V
I
q
Quiescent motor supply current
Internal oscillator selected;
VREG = 3.3V ext;
CP floating
0.5 0.65 mA
T
j(WRN)
Thermal warning temperature 130 °C
T
j(SD)
Thermal shutdown temperature 160 °C
Charge pump
V
pump
Voltage swing for charge pump oscillator 10 V
f
pump,min
Minimum charge pump oscillator frequency
(1)
660 kHz
f
pump,max
Maximum charge pump oscillator frequency
(1)
800 kHz
I
boot
Average boot current
f
sw,A
= f
sw,B
= 15.6 kHz
POW_SR = ‘10’
1.1 1.4 mA
Output DMOS transistor
R
DS(on)
High side switch ON resistance
T
j
= 25 °C,
I
out
= 3A
0.37
Ω
T
j
= 125 °C,
(2)
I
out
= 3A
0.51
Low side switch ON resistance
T
j
= 25 °C,
I
out
= 3A
0.18
T
j
= 125 °C,
(2)
I
out
= 3A
0.23
I
DSS
Leakage current
OUT = V
S
3.1
mA
OUT = GND -0.3
t
r
Rise time
(3)
POW_SR = '00', I
out
= +1A 100
ns
POW_SR = '00', I
out
= -1A 80
POW_SR = ‘11’, I
out
= ±1A 100
POW_SR = ‘10’, I
lout
= ±1A 200
POW_SR = ‘01’, I
out
= ±1A 300