FSG 90 System
Appendix A
60 FAV_D10024 December 2014
A.4 Receiver Characteristics
First IF 10.0 MHz, second IF 455 kHz, high injection
Sensitivity (m = 30% / 1,000 Hz)
≤ 2 µV EMF (≤ -107 dBm/50 Ω) for 6 dB S+N/N
SINAD decreased from 12 dB to 6 dB
Reference level m = 60%/1,000 Hz for 12 dB SINAD
Interference level m = 60%/400 Hz
≤ 6 dB for ± 8 kHz (25 kHz CH spacing)
≥ 60 dB for ± 17 kHz (25 kHz CH spacing)
≥ 70 dB for ± 25 kHz (25 kHz CH spacing)
≤ 6 dB for ± 3 kHz (8.33 kHz CH spacing)
≥ 50 dB for ± 7.37 kHz (8.33 kHz CH spacing)
Automatic (FM/AM), adjustable (SET-UP); manual override.
≤ 6 dB, 2 µV EMF (-107 dBm) ... 2 V EMF (+13 dBm/50 Ω),
m = 30%/1,000 Hz
≤ 0.1 sec, 200 mV EMF (-1 dBm) 2 µV EMF (-107 dBm /
50 Ω), m = 30%/1,000 Hz)
≤ 0.1 sec at 10 µV EMF (-93 dBm / 50 Ω), after TX end
Modulation distortion (AF Processor OFF)
≤ 10%, 350 ... 2,500 Hz (m = 85%)
Audio Frequency Response / AF Fidelity
≤ +2 dB and -4 dB, 350 ... 2,500 Hz, 25 kHz and 8.33 kHz
CH spacing
≥ -20 dB, 4,000 Hz, 25 kHz CH spacing (Climax Offset
Operation)
Nominal AF Output (Speaker)
≥ 4 Watt / 4 Ω, or ≥ 8 Watt / 2 Ω (at 13.8 Vdc)
≥ 1.5 Watt / 4 Ω (at 10 Vdc)
Nominal AF Output (Phone)
≥ 100 mW / 600 Ω (at 13.8 Vdc)
≥ 50 mW / 600 Ω (at 10 Vdc)
≥ 40 dB, m = 30%/1,000 Hz
200 µV EMF (-67 dBm/50 Ω) ... 10 mV EMF (-33 dBm/50 Ω)
≤ 1 Volt into 600 Ω for rated AF output (13.8 Vdc supply)
≥ 10 mV EMF (-33 dBm), m = 30%/1 kHz, for S+N/N ≤ 6 dB
a) 108 - 156 MHz (of any Test Channel ≤ ± 8 kHz), at other
than the assigned channel and the adjacent channels
b) 50 kHz – 1,215 MHz (except 108 - 156 MHz)
Cross Modulation (AF Processor OFF)
Max. AF output level ≥ 10 dB below nominal AF output level:
a) Wanted signal 20 µV EMF (-87 dBm) ... 500 µV EMF (-59
dBm/50 Ω), unmodulated at RX frequency, additional
b) Unwanted signal 10 mV EMF (-33 dBm), m = 30%/1,000
Hz, frequency 100 - 156 MHz (frequency ≤ ± 2 RX
channels)
Intermodulation (AF Processor OFF)
≤ 6 dB AF Quieting (-5 dBm/50 Ω, 87.5 – 107.9 MHz),
2 signals