4
Typical power BJT Parameter Symbol Unit Measurement*
1
Typical Measurable Range of B1505A
Collector Current Ic A Ic-Vce
-40 A to 40 A
(Minimum 10 fA resolution) *
2
DC Current gain h
FE
Ic-Ib 1 ~ 10000 *
3
Collector Emitter Sustaining Voltage V
CE(SUS)
Collector Emitter Breakdown Voltage V
(BR)CEO
Collector-Emitter Cut-off Current I
CEO
A Ic-Vceo
-8 mA to 8 mA
(Minimum 10 fA resolution) *
4
Collector-Base Voltage V
CBO
V Ic-Vcbo
-3,000 V to 3,000 V
(Minimum 200
µ
V resolution) *
5
Collector-Base Cut-off Current I
CBO
A Ic-Vcbo
-8 mA to 8 mA
(Minimum 10 fA resolution) *
4
Emitter-Base Voltage V
EBO
V Ie-Vebo
-20 V to 20 V
(Minimum 2
µ
V resolution) *
6
Emitter Cut-off Current I
EBO
A Ie-Vebo
-1 A to 1 A
(Minimum 10 fA resolution) *
7
Collector-Emitter Saturation Voltage V
CE(sat)
V Vce(sat)-Ic
-20 V to 20 V
(Minimum 2
µ
V resolution) *
6
Base-Emitter Saturation Voltage V
BE(sat)
V Vce(sat)-Ic
-20 V to 20 V
(Minimum 2
µ
V resolution) *
6
Base Emitter ON Voltage V
BE(on)
V Ic-Vbe
-20 V to 20 V
(Minimum 2
µ
V resolution) *
6
Collector-Emitter Voltage (Base-Emitter
short)
V
CES
V Ic-Vces
-3,000 V to 3,000 V
(Minimum 200
µ
V resolution) *
5
Output Capacitance Cob pF C-V Better than 1% at C<10 nF *
8
V Ic-Vceo
-3,000 V to 3,000 V
(Minimum 200
µ
V resolution) *
4
Note: *1: Measurement used for extracting the parameter.
*2: With two HCSMUs and requires Dual HCSMU Combination Adapter.
*3: Rule of thumb (Example (Ic/Ib): 20 A/20 A ~ 1 A/100
µ
A)
*4: HVSMU. Maximum 4 mA at 3 kV, 8 mA at 1,500 V.
*5: HVSMU
*6: HPSMU and HCSMU. 2
µ
V resolution at 2 V range.
*7: HPSMU at 20 V range
*8: Max. 3,000 V DC bias with High-voltage Bias T adapter.
Table 1. Typical DC and Capacitance parameters of power BJT and the compatibility of the B1505A.