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The following device is used in the measurement examples of this handbook.
MJL4281AG is a high-power BJT for audio application, and this transistor is used in
both the high current and high voltage measurement examples. This power BJT
used in the examples in the next chapter is suitable for showing the full capabilities
of the B1505A`s performance in a wide range of applications.
Even in case a different power BJT is used, the example test setup of this handbook
is not being affected by which power BJT is used, and the user can just enter appro-
priate parameters depending on the specification of the power BJT used.
Power BJT specifications
MJL4281AG (NPN) – High-power audio applications
●
Bce(sus), V(BR)ceo: > 350 V (Ic=50 mA, Ib=0 A)
●
Iceo: < 100 µΑ (Vce=200 V, Ib=0 A)
●
Vcbo: > 350 V (Absolute Maximum)
●
Icbo: < 50 µΑ (Vcb=350 V, Ie=0 A)
●
Vebo: > 5 V (Absolute Maximum)
●
Iebo: < 5 µΑ (Veb=5 V, Ic=0 A)
●
Ic < 30 A (Pw < 5 ms, Duty <10 %)
●
PD 230 W (Tc=25 degC)
●
hFE 80 - 250 (Vce=5 V, Ic=0.1 ~ 5 A)
>50 (Vce=5 V, Ic=8 A)
>10 (Vce=5 V, Ic=15 A)
●
Vbe(on) < 1.5 V (Vce=5 V, Ic=5 A)
●
Vce(sat) < 1 V (Ic=8 A, Ib=0.8 A)
●
Vbe(sat) < 1.4 V (Ic=8 A, Ib=0.8 A)
●
Cob: < 600 pF (Vcb=10 V, Ie=0 A, f=1 MHz)
2-3. Devices used in the measurement examples
MJL4281AG
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