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Agilent B1505A Power Device Analyzer/Curve Tracer is a powerful tool for measur-
ing and characterizing power devices.
This power bipolar junction transistor (BJT) measurement handbook covers how to
measure the typical power BJT parameters found in power BJT specifications or
data sheet as shown in table 1. Each test is covered with step by step instructions of
cable connection to the power BJT and the parameter setting of the test, and you
can easily setup the test and execute it by just following the guide.
The step by step measurement handbook covers;
●
A cable connection from the instrument to the device terminal,
●
A test setup of the measurement parameters and the data extraction scheme,
●
A test execution and analysis on EasyEXPERT software which is resident in
B1505A and provides all the control of the B1505A.
A customized Application Test Library is created for testing the specifications intro-
duced in this measurement handbook. They can be downloaded from the Agilent
web site and you can use them by importing to your B1505A. They include the Appli-
cation Test library and the test definitions, and you can start measurements right
away.
Measuring power devices sometimes requires special knowledge of both the device
and the measuring instruments.
For example, the high voltage breakdown test sometimes requires a series resistor
connected between the High voltage SMU (HVSMU) and the collector of power BJT
to measure the breakdown characteristics or to protect from a damage of the device
from an unusual device breakdown.
The connection between SMU and the power BJT requires a different technique
than the power MOSFET because the base current of the power BJT is relatively
higher, and the voltage drop by the connection cable and the contact cannot be ig-
nored.
You can perform accurate measurement by following the steps of setup and the
measurement instructions of this measurement handbook.
Introduction
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