RM46L852
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SPNS185 –SEPTEMBER 2012
4.10.5 Program Flash
Table 4-24. Timing Requirements for Program Flash
Parameter MIN NOM MAX Unit
t
prog(144bit)
Wide Word (144bit) programming time 40 300 µs
t
prog(Total)
1.25MByte programming time
(1)
-40°C to 105°C 13 s
0°C to 60°C, for first 3.3 6.6 s
25 cycles
t
erase(bank0)
Sector/Bank erase time -40°C to 105°C 0.3 4 s
0°C to 60°C, for first 30 500 ms
25 cycles
t
wec
Write/erase cycles with 15 year Data Retention -40°C to 105°C 1000 cycles
requirement
(1) This programming time includes overhead of state machine, but does not include data transfer time. The programming time assumes
programming 144 bits at a time at the maximum specified operating frequency.
4.10.6 Data Flash
Table 4-25. Timing Requirements for Data Flash
Parameter MIN NOM MAX Unit
t
prog(144bit)
Wide Word (144bit) programming time 40 300 µs
t
prog(Total)
EEPROM Emulation (bank 7) 64kByte -40°C to 105°C 660 ms
programming time
(1)
0°C to 60°C, for first 165 330 ms
25 cycles
EEPROM Emulation (bank 7) Sector/Bank erase time t
erase(bank7)
-40°C to 105°C 0.08 8 s
0°C to 60°C, for first 30 500 ms
25 cycles
t
wec
Write/erase cycles with 15 year Data Retention -40°C to 105°C 100000 cycles
requirement
(1) This programming time includes overhead of state machine, but does not include data transfer time. The programming time assumes
programming 144 bits at a time at the maximum specified operating frequency.
Copyright © 2012, Texas Instruments Incorporated System Information and Electrical Specifications 83
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