EasyManua.ls Logo

Texas Instruments RM46L852

Texas Instruments RM46L852
173 pages
To Next Page IconTo Next Page
To Next Page IconTo Next Page
To Previous Page IconTo Previous Page
To Previous Page IconTo Previous Page
Loading...
PRODUCTPREVIEW
RM46L852
www.ti.com
SPNS185 SEPTEMBER 2012
4.10.5 Program Flash
Table 4-24. Timing Requirements for Program Flash
Parameter MIN NOM MAX Unit
t
prog(144bit)
Wide Word (144bit) programming time 40 300 µs
t
prog(Total)
1.25MByte programming time
(1)
-40°C to 105°C 13 s
0°C to 60°C, for first 3.3 6.6 s
25 cycles
t
erase(bank0)
Sector/Bank erase time -40°C to 105°C 0.3 4 s
0°C to 60°C, for first 30 500 ms
25 cycles
t
wec
Write/erase cycles with 15 year Data Retention -40°C to 105°C 1000 cycles
requirement
(1) This programming time includes overhead of state machine, but does not include data transfer time. The programming time assumes
programming 144 bits at a time at the maximum specified operating frequency.
4.10.6 Data Flash
Table 4-25. Timing Requirements for Data Flash
Parameter MIN NOM MAX Unit
t
prog(144bit)
Wide Word (144bit) programming time 40 300 µs
t
prog(Total)
EEPROM Emulation (bank 7) 64kByte -40°C to 105°C 660 ms
programming time
(1)
0°C to 60°C, for first 165 330 ms
25 cycles
EEPROM Emulation (bank 7) Sector/Bank erase time t
erase(bank7)
-40°C to 105°C 0.08 8 s
0°C to 60°C, for first 30 500 ms
25 cycles
t
wec
Write/erase cycles with 15 year Data Retention -40°C to 105°C 100000 cycles
requirement
(1) This programming time includes overhead of state machine, but does not include data transfer time. The programming time assumes
programming 144 bits at a time at the maximum specified operating frequency.
Copyright © 2012, Texas Instruments Incorporated System Information and Electrical Specifications 83
Submit Documentation Feedback

Table of Contents

Related product manuals